Datenblatt-pdf.com


33486A Schematic ( PDF Datasheet ) - Freescale Semiconductor

Teilenummer 33486A
Beschreibung Dual High-Side Switch
Hersteller Freescale Semiconductor
Logo Freescale Semiconductor Logo 




Gesamt 30 Seiten
33486A Datasheet, Funktion
www.DFaretaeSshceeatl4eUS.ceommiconductor
Technical Data
Dual High-Side Switch for
H-Bridge Applications
This 33486A is a self-protected dual 15 mhigh-side switch that
incorporates a dual low-side switch control and protection features.
This device is used to replace electromechanical relays and discrete
devices in power management applications. It is designed for typical
DC-motor control in an H-Bridge configuration.
The 33486A can directly interface with a microcontroller for control
and diagnostic functions. It is PWM-capable and has a self-adjusting
switching speed for minimizing electromagnetic emission.
Features
• Dual 15 mHigh-Side Switch with Dual Low-Side Control
• 10 A Nominal DC Current
• 8.0 V to 28 V Operating Voltage with Standby Current < 10 µA
• High-Side Overtemperature Protection
• High-Side and Low-Side Overcurrent Protection
• Current Recopy to Monitor High-Side Current
• PWM Capability up to 30 kHz
• Common Diagnostic Output
• Overvoltage and Undervoltage Detection
• Cross-Conduction Management
Document order number: MC33486A
Rev 2.0, 12/2005
33486A
DUAL HIGH-SIDE SWITCH
DH SUFFIX
98ASH70702A
20-TERMINAL HSOP
ORDERING INFORMATION
Device
MC33486ADH/R2
Temperature
Range (TA)
-40°C to 125°C
Package
20 HSOP
5.0 V
MCU
GND
5.0 V
VBAT
33486A
VBAT
ST
IN1
IN2
WAKE
Cur R
OUT2
GLS2
OUT1
GLS1
GND
Figure 1. 33486A Simplified Application Diagram
* This document contains certain information on a new product.
Specifications and information herein are subject to change without notice.
© Freescale Semiconductor, Inc., 2005. All rights reserved.






33486A Datasheet, Funktion
STATIC ELECTRICAL CHARACTERISTICS
Table 3. STATIC ELECTRICAL CHARACTERISTICS (continued)
Characteristics noted under conditions 9.0 V VBAT 16 V, -40°C TJ 150°C unless otherwise noted. Typical values noted
reflect the approximate parameter mean at TJ = 25°C under nominal conditions unless otherwise noted.
Characteristic
Symbol
Min
Typ
Max Unit
OVERLOAD PROTECTION
High-Side Output Current Shutdown
Low-Side Over Load Detection (VOUT - GND)
Thermal Shutdown
Thermal Shutdown Hysteresis
Undervoltage Shutdown Threshold
Undervoltage Shutdown Hysteresis
Overvoltage Shutdown Threshold
Overvoltage Shutdown Hysteresis
CURRENT RECOPY
Current Recopy Ratio
IOUT from 4.0 A to 8.0 A, TJ = -40°C to 105°C
IOUT from 2.0 A to 4.0 A, TJ = -40°C to 105°C
ILIM
VOUT - FAULT
TSHUT
THYST
VUV
VUYST
VOV
VOV - HYST
CR
20
1.0
150
6.0
27
3145
2960
35
175
10
7.0
0.15
29
0.15
3700
3700
50
1.6
190
8.0
31
4255
4440
A
V
°C
°C
V
V
V
V
33486A
6
Analog Integrated Circuit Device Data
Freescale Semiconductor

6 Page









33486A pdf, datenblatt
FUNCTIONAL DESCRIPTION
FUNCTIONAL INTERNAL BLOCK DESCRIPTION
Thermal Model
The junction-to-ambient thermal resistance of the circuit
mounted on a printed circuit board can be spit into two main
parts: junction-to-case and case-to-ambient resistances.
Figure 8 shows a simplified steady state model.
Power (W)
(1.0 A = 1.0 W of
Power Dissipation)
Junction Temperature Node
(Volts represent Die
Surface Temperature)
Switch
RθJC
Case Temperature Node
RθCA
(1.0 = 1.0°C/W)
Ambient Temperature Node
(1.0 V = 1.0°C Ambient Temperature)
Figure 8. Simplified Thermal Model
(Electrical Equivalent)
The use of this model is similar to the electrical Ohm law
(voltage = resistance x current), where:
•Voltage represents temperature.
•Current represents power dissipated by the device.
•Resistance represents thermal resistance.
We finally have:
Temperature or delta temperature = power dissipation
times thermal resistance; that is, °C = W x °C/W.
Any node temperature can easily be calculated knowing
the amount of power flowing through the thermal resistances.
Example
1. Numerical Value
•Junction-to-case thermal resistance (RθJC): 2.0°C/W
•Power into the switch: Assuming the device is driving
8.0 A at 150°C junction temperature (RDS(ON) at
150°C is 40 m), the total power dissipation is 0.04 *
8 * 8 = 2.56 W
•Case-to-ambient thermal resistance (RθCA): 20°C/W
2. Results
•Junction-to-case delta temperature: 5.0°C (2.5 W x
2.0°C/W)
•Case delta temperature from ambient: 50°C (20°C/W x
2.5 W)
•Actual junction temperature node will be:
50°C + 5.0°C = 55°C above the ambient
temperature.
Assuming an 85°C ambient temperature, the junction
temperature is 85°C + 55°C = 140°C.
The above example takes into account the junction-to-
ambient thermal resistance, assuming that ambient
temperature is 85°C.
In the case where the device plus its printed circuit board
are located inside a module, the ambient temperature of the
module should be taken into account. Or an additional
thermal resistance from inside module to external ambient
temperature must be added. The calculation method remains
the same.
The low-side block is packaged into D2PAK or DPAK
package. Junction-to-case thermal resistance is
approximately 2/0°C/W. The junction-to-ambient thermal
resistance follows the same rules as for the high-side block
and is in the same range.
33486A
12
Analog Integrated Circuit Device Data
Freescale Semiconductor

12 Page





SeitenGesamt 30 Seiten
PDF Download[ 33486A Schematic.PDF ]

Link teilen




Besondere Datenblatt

TeilenummerBeschreibungHersteller
33486ADual High-Side SwitchFreescale Semiconductor
Freescale Semiconductor

TeilenummerBeschreibungHersteller
CD40175BC

Hex D-Type Flip-Flop / Quad D-Type Flip-Flop.

Fairchild Semiconductor
Fairchild Semiconductor
KTD1146

EPITAXIAL PLANAR NPN TRANSISTOR.

KEC
KEC


www.Datenblatt-PDF.com       |      2020       |      Kontakt     |      Suche