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PDF 33285 Data sheet ( Hoja de datos )
| Número de pieza | 33285 | |
| Descripción | Dual High-Side TMOS Driver | |
| Fabricantes | Freescale Semiconductor | |
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Advance Information
Document Number: MC33285
Rev. 5.0, 2/2007
Dual High-Side TMOS Driver
A single input controls the 33285 in driving two external high-side N-
Channel TMOS power FETs controlling incandescent or inductive
loads. Pulse Width Modulated (PWM) input control to 1.0 kHz is
possible. The 33285 contains a common internal charge pump used to
enhance the Gate voltage of both FETs.
An external charge capacitor provides access to the charge pump
output. Both external FETs are protected against inductive load
transients by separate internal source-to-gate dynamic clamps. The
power FETs are protected by the 33285 with short-circuit delay time of
800 µs. The device is designed to withstand reverse polarity battery
and load dump transients, encountered in automotive applications.
33285
HIGH-SIDE TMOS DRIVER
Features
• PWM Capability
• Power TMOS Number One (OUT1) Short-Circuit Detection and
Short-Circuit Protection
• Voltage Range 7.0 V ≤ 40 V
• Extended Temperature Range from -40°C ≤ 125°C
• Load Dump Protected
• Overvoltage Detection and Activation of OUT2 During
Overvoltage
• Single Input Control for Both Output Stages
• Capacitor Value of 100 nF Connected to Pin CP
• Analog Input Control Measurement Detection
• OUT1 LOAD Leakage Measurement Detection
• Pb-Free Packaging Designated by Suffix Code EF
D SUFFIX
EF SUFFIX (PB-FREE)
98ASB42564B
8-PIN SOICN
ORDERING INFORMATION
Device
MC33285D/R2
MCZ33285EF/R2
Temperature
Range (TA)
-40°C to 125°C
Package
8 SOICN
VCC
Input Control
33285
VCC DRN
CP
OUT2
IN OUT1
GND SRC
VPWR
Motor
Figure 1. 33285 Simplified Application Diagram
* This document contains certain information on a new product.
Specifications and information herein are subject to change without notice.
© Freescale Semiconductor, Inc., 2007. All rights reserved.
1 page  
ELECTRICAL CHARACTERISTICS
STATIC ELECTRICAL CHARACTERISTICS
STATIC ELECTRICAL CHARACTERISTICS
Table 3. Static Electrical Characteristics
Characteristics noted under conditions TA from -40°C ≤ 125°C, VCC from 7 V ≤ 20 V, unless otherwise noted. Typical values
noted reflect the approximate parameter mean at TA = 25°C under nominal conditions, unless otherwise noted.
Characteristic
Symbol Min Typ Max Unit
OVERVOLTAGE AND OVER CURRENT
Load Dump Activation Time
Error Voltage Threshold
SRC PIN 1
Leakage Current
Leakage Current Detection Time
DRN PIN 3
Operating Current (7.0 V < VDRN < 20 V)
Leakage Current (0 V < VDRN < 20 V, VVCC < 4.0 V)
OUT1, PIN 2, AND OUT2 PIN 4
Output ON Voltage. Charge Pump ON
Turn OFF Current, VOUT > 0.5 V
VCC PIN 6
Supply Voltage Range
Quiescent Supply Current at VCC = 20 V
IN PIN 8
Input Low Voltage OUT1
Input High Voltage OUT1
Input Hysteresis OUT1 and OUT2
Input Pull Down Current, 0.7 V < VIN < 6.0 V
Open Input Voltage
Input Low Voltage OUT2
Input High Voltage OUT2
tOUT2ACT
VDRN - VSRC
300
1.12
ILCDET
tLCDET
15
130
IDRN
ILEAK-DRN
—
-5.0
VON
IOUTOFF
—
66
VCC
ICC
7.0
—
VIL
VIH
VHYS
IIN
VIOP
VIL2
VIH2
—
1.7
0.4
7.5
—
—
3.9
460 620 ms
— 1.44 V
30 50 mA
200 270
µA
— 1.5 mA
— 5.0 µA
— VCC + 15 V
110 154
µA
— 40 V
— 10 mA
— 0.7 V
—— V
—— V
15 16.5 µA
— 0.7 V
— 3.0 V
—— V
Analog Integrated Circuit Device Data
Freescale Semiconductor
33285
5
5 Page 
REVISION HISTORY
Analog Integrated Circuit Device Data
Freescale Semiconductor
33285
11
11 Page | ||
| Páginas | Total 13 Páginas | |
| PDF Descargar | [ Datasheet 33285.PDF ] | |
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