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33198 Schematic ( PDF Datasheet ) - Freescale Semiconductor

Teilenummer 33198
Beschreibung Automotive High-Side TMOS Driver
Hersteller Freescale Semiconductor
Logo Freescale Semiconductor Logo 




Gesamt 17 Seiten
33198 Datasheet, Funktion
www.DFaretaeSshceeatl4eUS.ceommiconductor
Technical Data
Automotive High-Side TMOS
Driver
Document Number: MC33198
Rev. 2.0, 11/2006
33198
The MC33198 is a high-side TMOS driver, dedicated to automotive
applications. It is used in conjunction with an external power MOSFET
for high-side drive applications. The device can drive and protect a
HIGH-SIDE TMOS DRIVER
large variety of MOSFETs. The device has a CMOS compatible input
control, charge pump to drive the MOSFET gate, and fault detection
circuitry based on programmable VDS monitoring to detect shorted
loads. It also includes a programmable timer function to eliminate
undesired switch off due to in rush currents, and a status pin which
reports the output status of both on and off MOSFET states. The device
uses few external components and offers an economical solution to
large current high side switches. It also has PWM capability up to 1kHz.
Features
D SUFFIX
EF SUFFIX (PB-FREE)
98ASB42564B
8-PIN SOICN
• Designed for Automotive High Side Driver Application
• Works with a Wide Variety of N-Channel Power MOSFETs
• PWM Capability
ORDERING INFORMATION
• On Board Charge Pump Capable of Charging 25nF in less than 1ms
with No External Components Required
• Drive Inductive Load with No External Clamp Circuitry Required
• CMOS Logic Compatible Input Control
• TMOS Over Current and Short Circuit Protection
Device
MC33198D
MCZ33198EF/R2
Temperature
Range (TA)
-40°C to 125°C
Package
8 SOICN
• Fault Output to Report an MOSFET Overcurrent Condition
• Output Status Available when MOSFET is On or Off
• Extended Temperature Range from -40°C to 125°C
• Protected Against Automotive Transients with few External Components
• Overvoltage and Undervoltage Shutdown
• Pb-Free Packaging Designated by Suffix Code EF
MCU
5.0V
33198
VCC
DRN
INPUT
GATE
STATUS
SRC
TIMER
GND
V BAT
LOAD
Figure 1. 33198 Simplified Application Diagram
Freescale Semiconductor, Inc. reserves the right to change the detail specifications,
as may be required, to permit improvements in the design of its products.
© Freescale Semiconductor, Inc., 2007. All rights reserved.






33198 Datasheet, Funktion
ELECTRICAL CHARACTERISTICS
STATIC ELECTRICAL CHARACTERISTICS
Table 3. Static Electrical Characteristics (continued)
Characteristics noted under conditions 7.0 V VSUP 20 V, -40°C TA 125°C, GND = 0 V unless otherwise noted. Typical
values noted reflect the approximate parameter means at TA = 25°C under nominal conditions unless otherwise noted.
Characteristic
Symbol Min Typ Max Unit
TIMER PIN 8
Timer Current
On Threshold
Discharge Current @ VPIN8 = 5.0V
Saturation Voltage @ IPIN8 = 1mA
ITIME
VHTH
IDISCH
VSAT
7.0 10 14 µA
5.2 5.5 5.8
V
2.0 5.0 10 mA
- 0.15 0.4 V
33198
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Analog Integrated Circuit Device Data
Freescale Semiconductor

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33198 pdf, datenblatt
FUNCTIONAL DESCRIPTION
INTRODUCTION
In addition, the pin 8 capacitor value should be calculated
to allow inrush current.
SOURCE (PIN1) AND DRAIN (PIN2)
FUNCTIONALITY
These two pins are used to sense the MOSFET and load
conditions. Pin 2 is connected to the internal pull down
current source of 80mA and to the C2 comparator. An
external resistor connected between pin 2 and VBAT creates
a voltage drop across this resistor. The voltage drop will be
the MOSFET maximum acceptable drain to source voltage
and the C2 comparator threshold.
Pin 1 is connected to the MOSFET source pin. Two
different cases should be considered, MOSFET on or off :
When the MOSFET is on and working under normal
conditions, the VDS should be less than the voltage
developed at pin 2. So, the C2 comparator output is low and
the status is high. No current will flow through the pin 8
capacitor.
If the MOSFET encounters an overload or if the load is
shorted to Gnd, the voltage at the source will cross the pin 2
voltage and go below this pin 2 voltage, thereby turning on
the C2 comparator. The comparator will pull the status pin 6
low and will enable the charge of the pin 8 capacitor. When
the voltage at the capacitor reaches 5.5V, the C3 comparator
will switch off the MOSFET by disabling the charge pump and
the 110mA current source. The MOSFET gate will be
discharged only by the 10mA current source. The MOSFET
is latched off and can be turned back on again by switching
the input pin 7 to 0 and back to 1.
When the MOSFET is off, we have the same scheme.
Under normal conditions, the load should pull the source
voltage to Gnd, thus C2 comparator output is high and status
pin pulled low. If the load is shorted to VBAT for instance,
source pin will be higher than pin 2, The C2 output
comparator is low and the status pin is high. This is
summarized in Table 5, Status Functionality.
Table 5. Status Functionality
INPUT
PIN 7
CONDITION
LOAD
SOURCE
VOLTAGE
C2
OUTPUT
COMP
STATUS
PIN 6
TIMER
PIN 8
Low
Low
Normal
<VPIN2
Short Circuit >VPIN2
to VBAT
High
Normal
>VPIN2
High Short to GND <VPIN2
or Overload
High
Low
Low
High
Low Low
High Charge by
10 µA
source
High
Low
Low Charge by
10 µA
source
OPERATION WITH INDUCTIVE LOADS
The device can drive the MOSFET during inductive loads
switching applications. In this case, a 1.0kW resistor should
be connected between source of the MOSFET and device pin
1. The resistor will limit the current flowing into pin 1 and
prevent MC33198 from damage while switching the inductive
load off. The gate voltage is internally clamped at - Vbe (0.6V
typical), and the VDS is limited to VBAT + VBE + VGSON to
prevent excessive power dissipation in the MOSFET. The
load voltage is limited to VBE + VGSON and allows a
reasonable discharge current.
SWITCHING ON
The MOSFET switching on is ensured by the internal
charge pump. The charge pump response time versus the
MOSFET gate capacitance is shown in Table 4, Dynamic
Electrical Characteristics.
SWITCHING OFF
Here two cases have to be discussed: the MOSFET
normally switching off, and the switching off under a fault
condition. The normal switching off is done by internal pull
down current sources. The value is 110mA and is in fact
composed of two current sources in parallel: a 100mA and a
10mA source. The 10mA current is always connected to the
gate pin 4 as shown in the Internal Block Diagram on page 2.
The 100mA source can be disabled. This is the case when
the MOSFET is switched off under fault conditions. The
device will disable the 100mA current source and the
MOSFET gate will be discharged only by a 10mA current.
The time required to switch off the MOSFET will be much
longer in this case, and will result in a lower overvoltage at the
MOSFET, especially when the device drives high inductive
loads.
OFF STATE OPERATION WITHOUT VCC
CONNECTION
When pin 7 is in the low state, the MOSFET is off. If VBAT
is present, the gate voltage is discharged by the 110mA
current source. In the case of a VBAT disconnection, a self
sustaining 5.0mA pull down current source is incorporated in
the device, to ensure that the MOSFET gate capacitor is
discharged and tied below 0.9V. In case of a VCC
disconnection, input pin 7 has no effect on the gate voltage,
which is maintained below 0.9V. In this case, the status pin is
high. Low leakage current at pin 2 (10mA max) allows the
operation with the MOSFET and MC33198 pin 2 permanently
connected to the battery. VCC and other functions can be
switched off from the main battery line. See Figure 18.
PWM OPERATION
Since the MC33198 charge pump can deliver a high
current, the MOSFET gate can be charged fast enough to
allow for PWM operations. The maximum PWM frequency is
dependent on the MOSFET itself and mainly its gate to the
source capacitor value. Depending on the PWM frequency,
33198
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Freescale Semiconductor

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