|
|
PDF MCP1405 Data sheet ( Hoja de datos )
| Número de pieza | MCP1405 | |
| Descripción | (MCP1403 - MCP1405) Low-side MOSFET Drivers | |
| Fabricantes | Microchip Technology | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de MCP1405 (archivo pdf) en la parte inferior de esta página. Total 22 Páginas | ||
|
No Preview Available !
www.DataSheet4U.com
MCP1403/4/5
4.5A Dual High-Speed Power MOSFET Drivers
Features
• High Peak Output Current: 4.5A (typ.)
• Low Shoot-Through/Cross-Conduction Current in
Output Stage
• Wide Input Supply Voltage Operating Range:
- 4.5V to 18V
• High Capacitive Load Drive Capability:
- 2200 pF in 15 ns
- 5600 pF in 34 ns
• Short Delay Times: 40 ns (typ.)
• Low Supply Current:
- With Logic ‘1’ Input – 1.0 mA (typ.)
- With Logic ‘0’ Input – 150 µA (typ.)
• Latch-Up Protected: Will Withstand 1.5A Reverse
Current
• Logic Input Will Withstand Negative Swing
Up To 5V
• Packages: 8-Pin SOIC, PDIP, 8-Pin 6x5 DFN,
and 16-Pin SOIC
Applications
• Switch Mode Power Supplies
• Pulse Transformer Drive
• Line Drivers
• Motor and Solenoid Drive
General Description
The MCP1403/4/5 are a family of dual-inverting, dual-
non-inverting, or complimentary output drivers. They
can delivery high peak currents of 4.5A typically into
capacitive loads. These devices also feature low shoot-
through current, matched rise/fall times and
propagation delays.
The MCP1403/4/5 drivers operate from a 4.5V to 18V
single power supply and can easily charge and
discharge 2200 pF gate capacitance in under 15 ns
(typ). They provide low enough impedances in both the
on and off states to ensure the MOSFETs intended
state will not be affected, even by large transients. The
input to the MCP1403/4/5 may be driven directly from
either TTL or CMOS (3V to 18V).
The MCP1403/4/5 dual-output 4.5A driver family is
offered in both surface-mount and pin-through-hole
packages with a -40oC to +125oC temperature rating.
The low thermal resistance of the thermally enhanced
DFN package allows for greater power dissipation
capability for driving heavier capacitive or resistive
loads.
These devices are highly latch-up resistant under any
conditions within their power and voltage ratings. They
are not subject to damage when up to 5V of noise
spiking (of either polarity) occurs on the ground pin. All
terminals are fully protect against Electrostatic
Discharge (ESD) up to 4 kV.
Package Types
8-Pin
MCP1404
PDIP/SOIC MCP1403
MCP1405
NC 1
IN A 2
GND 3
IN B 4
8 NC
7 OUT A
6 VDD
5 OUT B
NC
OUT A
VDD
OUT B
NC
OUT A
VDD
OUT B
MCP1404
8-Pin DFN(2) MCP1403
MCP1405
NC 1
IN A 2
GND 3
IN B 4
8 NC
7 OUT A
6 VDD
5 OUT B
NC
OUT A
VDD
OUT B
NC
OUT A
VDD
OUT B
16-Pin SOIC
MCP1404
MCP1403
MCP1405
NC
IN A
NC
GND
GND
NC
IN B
NC
1
2
3
4
5
6
7
8
16 NC
15 OUT A
14 OUT A
13 VDD
12 VDD
11 OUT B
10 OUT B
9 NC
NC
OUT A
OUT A
VDD
VDD
OUT B
OUT B
NC
NC
OUT A
OUT A
VDD
VDD
OUT B
OUT B
NC
Note 1: Duplicate pins must both be connected for
proper operation.
2: Exposed pad of the DFN package is electrically
isolated.
© 2007 Microchip Technology Inc.
DS22022B-page 1
1 page  
www.DataSheet4U.com
MCP1403/4/5
2.0 TYPICAL PERFORMANCE CURVES
Note:
The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein
are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
Note: Unless otherwise indicated, TA = +25°C with 4.5V ≤ VDD ≤ 18V.
100
90 6800 pF
80
70 4700 pF
60
50
40
30
20 1800 pF
10
4 6 8 10 12 14
Supply Voltage (V)
2200 pF
16 18
FIGURE 2-1:
Voltage.
Rise Time vs. Supply
100
90 6800 pF
80
70 4700 pF
60
50
40
30
20 1800 pF
10
4 6 8 10 12 14
Supply Voltage (V)
2200 pF
16 18
FIGURE 2-4:
Voltage.
Fall Time vs. Supply
80
70
60
50
40
30
20
10
1000
FIGURE 2-2:
Load.
12V
5V
18V
Capacitive Load (pF)
10000
Rise Time vs. Capacitive
100
90
80
70
60
50
40
30
20
10
1000
FIGURE 2-5:
Load.
12V
5V
18V
Capacitive Load (pF)
10000
Fall Time vs. Capacitive
24
CLOAD = 1800 pF
22
20
tFALL
18
16
14 tRISE
12
-40 -25 -10 5 20 35 50 65 80 95 110 125
Temperature (oC)
FIGURE 2-3:
Temperature.
Rise and Fall Times vs.
160
135
VDD = 12V
CLOAD = 1800 pF
110
85
60
35
2
tD2
345678
Input Amplitude (V)
tD1
9 10
FIGURE 2-6:
Amplitude.
Propagation Delay vs. Input
© 2007 Microchip Technology Inc.
DS22022B-page 5
5 Page 
www.DataSheet4U.com
Placing a ground plane beneath the MCP1403/4/5 will
help as a radiated noise shield as well as providing
some heat sinking for power dissipated within the
device.
4.5 Power Dissipation
The total internal power dissipation in a MOSFET driver
is the summation of three separate power dissipation
elements.
PT = PL + PQ + PCC
Where:
PT = Total power dissipation
PL = Load power dissipation
PQ = Quiescent power dissipation
PCC = Operating power dissipation
4.5.1 CAPACITIVE LOAD DISSIPATION
The power dissipation caused by a capacitive load is a
direct function of frequency, total capacitive load, and
supply voltage. The power lost in the MOSFET driver
for a complete charging and discharging cycle of a
MOSFET is:
PL = f × CT × VDD2
Where:
f = Switching frequency
CT = Total load capacitance
VDD = MOSFET driver supply voltage
MCP1403/4/5
4.5.2 QUIESCENT POWER DISSIPATION
The power dissipation associated with the quiescent
current draw depends upon the state of the input pin.
The MCP1403/4/5 devices have a quiescent current
draw when both inputs are high of 1.0 mA (typ) and
0.15 mA (typ) when both inputs are low. The quiescent
power dissipation is:
PQ = (IQH × D + IQL × (1 – D)) × VDD
Where:
IQH = Quiescent current in the high state
D = Duty cycle
IQL = Quiescent current in the low state
VDD = MOSFET driver supply voltage
4.5.3 OPERATING POWER DISSIPATION
The operating power dissipation occurs each time the
MOSFET driver output transitions because for a very
short period of time both MOSFETs in the output stage
are on simultaneously. This cross-conduction current
leads to a power dissipation describes as:
PCC = CC × f × VDD
Where:
CC = Cross-conduction constant (A*sec)
f = Switching frequency
VDD = MOSFET driver supply voltage
© 2007 Microchip Technology Inc.
DS22022B-page 11
11 Page | ||
| Páginas | Total 22 Páginas | |
| PDF Descargar | [ Datasheet MCP1405.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| MCP1401 | High-Speed Power MOSFET Driver | Microchip Technology |
| MCP1402 | High-Speed Power MOSFET Driver | Microchip Technology |
| MCP1403 | (MCP1403 - MCP1405) Low-side MOSFET Drivers | Microchip Technology |
| MCP1404 | (MCP1403 - MCP1405) Low-side MOSFET Drivers | Microchip Technology |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |