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PDF RD00HVS1 Data sheet ( Hoja de datos )

Número de pieza RD00HVS1
Descripción RoHS Compliance
Fabricantes Mitsubishi Electric　
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No Preview Available ! RD00HVS1 Hoja de datos, Descripción, Manual

ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MOS FET
RD00HVS1
RoHS Compliance, Silicon MOSFET Power Transistor 175MHz,0.5W
DESCRIPTION
RD00HVS1 is a MOS FET type transistor specifically
designed for VHF/UHF RF amplifiers applications.
FEATURES
High power gain
Pout>0.5W, Gp>20dB @Vdd=12.5V,f=175MHz
APPLICATION
For output stage of high power amplifiers in VHF/UHF
Band mobile radio sets.
OUTLINE DRAWING
TYPE NAME
4.4+/-0.1
1.6+/-0.1
1.5+/-0.1
LOT No.
123
1.5+/-0.1 1.5+/-0.1
0.4+/-0.07 0.5+/-0.07 0.4+/-0.07
0.1 MAX
0.4
+0.03
-0.05
Terminal No.
1 : GATE
2 : SOURSE
3 : DRAIN
UNIT : mm
RoHS COMPLIANT
RD00HVS1-101,T113 is a RoHS compliant products.
This product include the lead in high melting temperature type solders.
How ever,it applicable to the following exceptions of RoHS Directions.
1.Lead in high melting temperature type solders(i.e.tin-lead solder alloys containing more than85% lead.)
www.DataSheet4U.com
ABSOLUTE MAXIMUM RATINGS
(Tc=25°C UNLESS OTHERWISE NOTED)
SYMBOL
PARAMETER
CONDITIONS
VDSS Drain to source voltage Vgs=0V
VGSS Gate to source voltage Vds=0V
Pch Channel dissipation Tc=25°C
Pin Input Power
Zg=Zl=50Ω
ID Drain Current
-
Tch Channel Temperature
-
Tstg Storage temperature
-
Rth j-c Thermal resistance
Junction to case
Note : Above parameters are guaranteed independently.
RATINGS
30
+/-10
3.1
20
200
150
-40 to +125
40
UNIT
V
V
W
mW
mA
°C
°C
°C/W
ELECTRICAL CHARACTERISTICS
(Tc=25deg.C , UNLESS OTHERWISE NOTED)
SYMBOL
PARAMETER
CONDITIONS
IDSS
IGSS
Vth
Pout
ηD
Zero gate voltage drain current VDS=17V, VGS=0V
Gate to source leak current VGS=10V, VDS=0V
Gate threshold Voltage
VDS=12V, IDS=1mA
Output power
VDD=12.5V, Pin=5mW,
Drain efficiency
f=175MHz,Idq=50mA
Note : Above parameters , ratings , limits and conditions are subject to change.
RD00HVS1
MITSUBISHI ELECTRIC
1/6
LIMITS
MIN TYP MAX.
- - 25
- -1
123
0.5 0.8
-
50 60
-
UNIT
uA
uA
V
W
%
10 Jan 2006

1 page




RD00HVS1 pdf
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MOS FET
RD00HVS1
RoHS Compliance, Silicon MOSFET Power Transistor 175MHz,0.5W
RD00HVS1 S-PARAMETER DATA (@Vdd=7.2V, Id=50mA)
Freq.
S11
S21
S12
S22
[MHz] (mag) (ang) (mag) (ang) (mag) (ang) (mag) (ang)
100 1.004 -35.2 13.480 158.7 0.027 66.7 0.928 -24.7
150 0.987 -51.9 12.911 147.1 0.039 56.1 0.889 -36.5
175 0.972 -59.7 12.500 141.6 0.043 50.7 0.865 -42.0
200 0.957 -67.1 12.035 136.2 0.048 45.6 0.843 -47.2
250 0.929 -80.1 11.030 126.6 0.054 37.5 0.796 -56.4
300 0.898 -91.5 10.055 118.7 0.058 30.2 0.754 -64.4
350 0.875 -101.4 9.157 111.3 0.060 23.7 0.716 -71.5
400 0.857 -110.0 8.322 104.9 0.062 18.2 0.688 -77.6
450 0.844 -117.3 7.642 99.3 0.063 13.3 0.668 -83.4
500 0.831 -124.1 6.991 93.9 0.063 8.5 0.652 -88.7
550 0.824 -130.0 6.432 89.5 0.064 4.8 0.640 -93.3
600 0.815 -135.0 5.963 84.9 0.063 1.1 0.633 -97.9
650 0.810 -139.9 5.480 80.7 0.062 -2.3 0.627 -102.1
700 0.809 -144.1 5.103 77.0 0.061 -5.4 0.626 -105.9
750 0.807 -148.1 4.769 73.1 0.060 -8.6 0.625 -109.6
800 0.806 -151.8 4.420 69.9 0.058 -11.0 0.627 -113.4
850 0.808 -155.1 4.161 66.8 0.056 -13.5 0.630 -116.8
900 0.808 -158.0 3.900 63.1 0.054 -16.2 0.634 -120.0
950 0.810 -161.1 3.639 60.3 0.053 -17.8 0.639 -123.3
1000 0.811 -163.9 3.466 57.7 0.051 -20.0 0.645 -126.4
1050 0.814 -166.5 3.254 54.1 0.048 -22.1 0.654 -129.3
1100 0.817 -168.9 3.045 51.9 0.046 -23.5 0.661 -132.1
RD00HVS1 S-PARAMETER DATA (@Vdd=12.5V, Id=50mA)
Freq.
S11
S21
S12
S22
[MHz] (mag) (ang) (mag) (ang) (mag) (ang) (mag) (ang)
100 1.005 -33.4 13.343 160.0 0.024 68.3 0.898 -22.6
150 0.995 -49.7 12.874 149.0 0.034 57.9 0.865 -33.1
175 0.980 -57.5 12.525 143.6 0.038 53.2 0.845 -38.0
200 0.967 -64.6 12.108 138.3 0.042 47.8 0.826 -42.9
250 0.943 -77.5 11.193 129.0 0.047 39.3 0.781 -51.3
300 0.916 -88.9 10.249 121.2 0.052 32.3 0.743 -58.9
350 0.891 -98.7 9.403 113.9 0.054 26.2 0.709 -65.6
400 0.877 -107.6 8.582 107.3 0.056 20.6 0.681 -71.5
450 0.862 -115.0 7.916 101.9 0.057 15.7 0.661 -77.0
500 0.852 -121.9 7.273 96.4 0.057 11.2 0.644 -82.0
550 0.844 -128.1 6.706 91.9 0.057 7.5 0.633 -86.6
600 0.835 -133.3 6.224 87.3 0.058 3.4 0.625 -91.2
650 0.828 -138.3 5.755 83.0 0.056 0.2 0.619 -95.2
700 0.824 -142.7 5.358 79.3 0.056 -2.5 0.618 -99.0
750 0.823 -146.8 5.024 75.4 0.054 -5.8 0.616 -102.9
800 0.820 -150.6 4.671 72.0 0.053 -8.4 0.615 -106.6
850 0.821 -153.9 4.398 68.9 0.051 -10.5 0.618 -110.1
900 0.822 -157.2 4.134 65.2 0.050 -13.3 0.622 -113.2
950 0.823 -160.2 3.853 62.3 0.048 -15.2 0.628 -116.5
1000 0.822 -163.1 3.677 59.7 0.047 -17.2 0.633 -119.8
1050 0.826 -165.9 3.459 56.3 0.044 -19.5 0.640 -122.9
1100 0.828 -168.4 3.241 53.9 0.042 -20.2 0.646 -125.7
RD00HVS1
MITSUBISHI ELECTRIC
5/6
10 Jan 2006

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