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PDF ML920L40S Data sheet ( Hoja de datos )
| Número de pieza | ML920L40S | |
| Descripción | (ML9xx40) 2.5Gbps InGaAsP DFB LASER DIODE | |
| Fabricantes | Mitsubishi Electric | |
| Logotipo |  |
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Notice : Some parametric limits are subject to change
MITSUBISHI LASER DIODES
ML9XX40 SERIES
2.5Gbps InGaAsP DFB LASER DIODE
TYPE ML925B40F / ML920J40S
NAME ML925J40F / ML920L40S
DESCRIPTION
ML9XX40 series are uncooled DFB (Distributed Feedback) laser
diodes for 2.5Gbps transmission emitting light beam at 1470~1610nm.
λ/4 shifted grating structure is employed to obtain excellent SMSR
performance under 2.5Gbps modulation. Furthermore, ML9xx40 can
operate in the wide temperature range from 0oC to 85 oC without any
temperature control. They are well suited for light source in long
distance digital transmission application of coarse WDM.
APPLICATION
· 2.5Gbps long-haul transmission
· Coarse WDM application
FEATURES
· λ/4 shifted grating structure
· Wide temperature range operation (0oC to 85oC)
· High side-mode-suppression-ratio (typical 45dB)
· High resonance frequency (typical 11GHz)
ABSOLUTE MAXIMUM RATINGS
Symbol
Po
If
VRL
IFD
VRD
Parameter
Output power
Forward current (Laser diode)
Reverse voltage (Laser diode)
Forward current (Photo diode)
Reverse voltage (Photo diode)
Tc Case temperature
Tstg Storage temperature
Conditions
CW
---
---
---
---
---
---
Ratings
6
150
2
2
20
0 to +85
-40 to +100
Unit
mW
mA
V
mA
V
ºC
ºC
ELECTRICAL/OPTICAL CHARACTERISTICS (Tc=25ºC)
Symbol
Parameter
Test conditions
Ithwww.DataSheet4U.com
Threshold current
CW
CW <*1>
Tc=85ºC
<*2>
Iop Operation current
CW, Po=5mW
CW, Po=5mW
<*1>
Tc=85ºC
<*2>
Vop Operating voltage
CW, Po=5mW
η Slope efficiency
CW, Po=5mW
CW, Po=5mW <*3>
λp Peak wavelength
CW, Po=5mW
SMSR
Side mode suppression ratio
Side mode suppression ratio(RF)
CW, Po=5mW, Tc=0 to 85ºC
2.48832Gbps,Ib=Ith, Ipp=40mA
θ // Beam divergence angle (parallel) <*6> CW, Po=5mW
θ ┴ (perpendicular) <*6> CW, Po=5mW
fr Resonance frequency
2.48832Gbps,Ib=Ith, Ipp=40mA
tr,tf Rise and Fall time <*7>
2.48832Gbps,Ib=Ith, Ipp=40mA
20%-80%
Im Monitoring output current (PD)
CW, Po=5mW,VRD=1V,RL=10Ω
Id Dark current (PD)
VRD=5V
Ct Capacitance (PD)
VRD=5V
<*1> Applied to ML9xx40-04~09 and -12~17.
<*2> Applied to ML9xx40-10~11 and -18~19.
<*3> Applied to ML925J40F and ML920L40S.
<*6> Beam divergence is not applied to ML925J40F and ML920L40S.
<*7> Except influence of the 18mm lead.
Min. Typ. Max.
--- 10 15
--- 35 40
--- 45 50
--- 35 45
--- 70 80
--- 90 100
--- 1.1 1.5
0.17 0.22 ---
0.15 0.20 ---
<*4>,<*5>
35 45 ---
--- 45 ---
--- 25 ---
--- 30 ---
Unit
mA
mA
V
mW/mA
nm
dB
deg.
deg.
--- 11 --- GHz
--- 80 120
0.1 --- 1.0
--- --- 0.1
--- 10 20
ps
mA
µA
pF
MITSUBISHI
ELECTRIC
Feb. 2005
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet ML920L40S.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| ML920L40S | (ML9xx40) 2.5Gbps InGaAsP DFB LASER DIODE | Mitsubishi Electric |
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