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PDF TC1102 Data sheet ( Hoja de datos )
| Número de pieza | TC1102 | |
| Descripción | Super Low Noise GaAs FETs | |
| Fabricantes | Transcom | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de TC1102 (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
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TRANSCOM
TC1102
January 2002
Super Low Noise GaAs FETs
FEATURES
• Low Noise Figure:
NF = 0.5 dB Typical at 12 GHz
• High Associated Gain:
Ga = 13 dB Typical at 12 GHz
• Lg = 0.25 µm, Wg = 160 µm
• All-Gold Metallization for High Reliability
• 100 % DC Tested
PHOTO ENLARGEMENT
DESCRIPTION
The TC1102 is a GaAs Pseudomorphic High Electron Mobility Transistor (PHEMT) chip, which has very
low noise figure and high associated gain. The device can be used in circuits up to 40 GHz and suitable
for low noise application including a wide range of commercial and military applications. All devices are
100% DC tested to assure consistent quality. All bond pads are gold plated for either thermo-compression
or thermo-sonic wire bonding.
ELECTRICAL SPECIFICATIONS (TA=25 °C)
Symbol
CONDITIONS
NF Noise Figure at VDS = 2 V, IDS = 10 mA,, f = 12GHz
Ga Associated Gain at VDS = 2 V, IDS = 10 mA, f = 12GHz
IDSS
gm
VP
BVDGO
Rth
Saturated Drain-Source Current at VDS = 2 V, VGS = 0 V
Transconductance at VDS = 2 V, VGS = 0 V
Pinch-off Voltage at VDS = 2 V, ID = 0.32 mA
Drain-Gate Breakdown Voltage at IDGO =0.08 mA
Thermal Resistance
MIN
11
5
TYP
0.5
13
40
55
-1.0
8
90
MAX
0.7
UNIT
dB
dB
mA
mS
Volts
Volts
°C/W
TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Shanhua Jen, Tainan County, Taiwan, R.O.C.
Web-Site: www.transcominc.com.tw
Phone: 886-6-5050086
Fax: 886-6-5051602
9
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet TC1102.PDF ] | |
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