(PDF) MSC82306 Datasheet - RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS

Número de pieza	MSC82306
Descripción	RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS
Fabricantes	STMicroelectronics
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No Preview Available ! MSC82306 RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS . REFRACTORY\GOLD METALLIZATION . VSWR CAPABILITY 20:1 @ RATED CONDITIONS . HERMETIC STRIPAC® PACKAGE . POUT = 5.5 W MIN. WITH 9.6 dB GAIN PRELIMINARY DATA .250 2LFL (S010) hermetically sealed ORDER CODE MSC82306 B RA ND IN G 82306 www.DataSheet4U.com DESCRIPTION The MSC82306 is a common base hermetically sealed silicon NPN microwave power transistor utilizing a rugged overaly die geometry. This device is capable of withstanding 20:1 load VSWR at any phase angle under rated conditions. The MSC82306 was designed for Class C Am- plifier/Oscillator applications in the 1.5 - 2.3 GHz frequency range. ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symb ol PDISS IC VCC TJ TSTG Parameter Power Dissipation* (TC ≤ 50°C) Device Current* Collector-Supply Voltage* Junction Temperature Storage Temperature THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance* *Applies only to rated RF amplifier operation October 1992 PIN CONNECTION 1. Collector 2. Base 3. Emitter 4. Base Value 16.7 900 26 200 − 65 to +200 Unit W mA V °C °C 9.0 °C/W 1/4 1 page

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PDF MSC82306 Data sheet ( Hoja de datos )