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Teilenummer | IRL3103SPBF |
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Beschreibung | Power MOSFET ( Transistor ) | |
Hersteller | International Rectifier | |
Logo | ||
Gesamt 10 Seiten www.DataSheet4U.com
l Advanced Process Technology
l Surface Mount (IRL3103S)
l Low-profile through-hole (IRL3103L)
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
l Lead-Free
Description
Advanced HEXFET® Power MOSFETs from International
Rectifier utilize advanced processing techniques to
achieve extremely low on-resistance per silicon area.
This benefit, combined with the fast switching speed and
ruggedized device design that HEXFET power MOSFETs
are well known for, provides the designer with an
extremely efficient and reliable device for use in a wide
variety of applications.
The D2Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible on-
resistance in any existing surface mount package. The
D2Pak is suitable for high current applications because of its
low internal connection resistance and can dissipate up to
2.0W in a typical surface mount application.
The through-hole version (IRL3103L) is available for low-
profile applications.
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
G
Thermal Resistance
RθJC
RθJA
Parameter
Junction-to-Case
Junction-to-Ambient (PCB mount)**
www.irf.com
PD - 95150
IRL3103SPbF
IRL3103LPbF
HEXFET® Power MOSFET
D VDSS = 30V
RDS(on) = 12mΩ
ID = 64A
S
D2Pak
IRL3103S
TO-262
IRL3103L
Max.
64
45
220
94
0.63
± 16
34
22
5.0
-55 to + 175
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Typ.
–––
–––
Max.
1.6
40
Units
A
W
W/°C
V
A
mJ
V/ns
°C
Units
°C/W
1
04/19/04
IRL3103S/LPbF
15V
VDS
L
D R IV E R
RG
2V0GVS
tp
D .U .T
IA S
0.0 1Ω
+
-
VD D
A
Fig 12a. Unclamped Inductive Test Circuit
V(BR)DSS
tp
IAS
Fig 12b. Unclamped Inductive Waveforms
VGS
QGS
VG
QG
QGD
Charge
Fig 13a. Basic Gate Charge Waveform
240 ID
TOP
14A
200 24A
BOTTOM 34A
160
120
80
40
0
25 50 75 100 125 150 175
Starting TJ , Junction Temperature ( °C)
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
Current Regulator
Same Type as D.U.T.
50KΩ
12V .2µF
.3µF
D.U.T.
+
-VDS
VGS
3mA
IG ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
6 www.irf.com
6 Page | ||
Seiten | Gesamt 10 Seiten | |
PDF Download | [ IRL3103SPBF Schematic.PDF ] |
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