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PDF BA01207 Data sheet ( Hoja de datos )
| Número de pieza | BA01207 | |
| Descripción | GaAs HBT HYBRID IC | |
| Fabricantes | Mitsubishi Electric | |
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Specifications are subject to change without notice.
MITSUBISHI SEMICONDUCTOR <GaAs HBT>
BA01207
GaAs HBT HYBRID IC
DESCRIPTION
The BA01207 GaAs RF amplifier designed for J-cdmaOne
hand-held phone.
FEATURES
Low voltage Vc =3.5V
High power Po=27.5dBm
High gain Gp=27.5dB@Po=27.5dBm
2stage amplifier
Internal input* and output matching
*Use DC block for input port
APPLICATION
N-CDMA (Spreading chip rate is 1.2288Mcps, modulation is
OQPSK) hand set.
Outline Drawing
1 87
unit : milimeter
26
3 45
4.5
1.5max. 1:Pin
2:Vc1
3:Vc2
4:GND
5:Pout
6:Vcb
7:Vref
8:GND
ABSOLUTE MAXIMUM RATINGS (Ta=25°C)
Symbol
Vcc
Pin
Tc(op)
Tstg
Parameter
Supply voltage of HPA
Input power
Operating case temp.
Storage temp.
Condition
ZG=ZL=50Ω
Ratings*
6
7
-20 ∼ +85
-30 ∼ +125
Unit
V
dBm
°C
°C
*Note : Each maximum rating is guaranteed independently .
ELECTRICAL CHARACTERISTICS(Ta=25°C , ZG=ZL=50Ω)
www.DataSheet4U.com
Symbol
Parameter
Test conditions
Limits
MIN TYP
f Frequency
Iq Quiescent current
Ict*1 Total current
Vc=3.5V,Vcb=Vref=2.8V
No Signal
Po=27.5dBm (IS-95B)
Icb+Iref Total current
Vc1=Vc2=3.5V
hadd Power added efficiency
Vcb=Vref=2.8V
Gain Power Gain
ACP*2
Adjacent channel power at 900KHz
Adjacent channel power at 1.98MHz
2sp 2nd harmonics
3sp 3rd harmonics
Rxnoise Noise in RX band
Ict*1 Total current
Po=15dBm (IS-95B)
Icb+Iref Total current
Vc1=Vc2=1.2V
Gain Power Gain
Vcb=Vref=2.8V
ACP*2
Adjacent channel power at 900KHz
Adjacent channel power at 1.98MHz
*1: Ict=Ic1+Ic2, *2:ACP=ACP (30KHz band at 900/1980KHz)-Po(1.23MHz band)
887 -
- 55
- 395
- 5.3
- 40
25 27.5
- -50
- -60
- -30
- -45
- -138
- 107
- 2.5
21.5 24
- -55
- -66
Unit
MAX
925 MHz
70 mA
420
10
-
-
-47
-57
-27
-30
-135
122
5.5
-
-47
-58
mA
mA
%
dB
dBc
dBc
dBc
dBc
dBm/Hz
mA
mA
dB
dBc
dBc
Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and reliable, but there is always the
possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, appropriate measures such as
(i)placement of substitutive, auxiliary, circuits, (ii)use of non-flammable material or (iii)prevention against any malfunction or mishap.
MITSUBISHI ELECTRIC CORP.
Created Date: Apr.2004
1 page | ||
| Páginas | Total 1 Páginas | |
| PDF Descargar | [ Datasheet BA01207.PDF ] | |
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