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PDF HRC0203C Data sheet ( Hoja de datos )
| Número de pieza | HRC0203C | |
| Descripción | Silicon Schottky Barrier Diode | |
| Fabricantes | Renesas Technology | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de HRC0203C (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
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Regarding the change of names mentioned in the document, such as Hitachi
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The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas
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and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.)
Accordingly, although Hitachi, Hitachi, Ltd., Hitachi Semiconductors, and other Hitachi brand
names are mentioned in the document, these names have in fact all been changed to Renesas
Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and
corporate statement, no changes whatsoever have been made to the contents of the document, and
these changes do not constitute any alteration to the contents of the document itself.
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Renesas Technology Corp.
Customer Support Dept.
April 1, 2003
1 page  
Main Characteristic
HRC0203C
1.0
10–1
Pulse test
10–2
10–3
10–4
Ta = 75°C
Ta = 25°C
Ta = –25°C
10–5
10–6
0
0.2 0.4 0.6 0.8
Forward voltage VF (V)
1.0
Fig.1 Forward current vs. Forward voltage
0.30
0.25
0.20
0A t
T
Tj = 25°C
D = —t
T
0.15
0.10
0.05
D=1/6
D=1/3
sin(θ=180˚)
D=1/2
DC
10–3
Ta = 75°C
10–4
10–5 Ta = 25°C
Pulse test
10–6
Ta = –25°C
10–7
10–8
0
10 20 30 40
Reverse voltage VR (V)
50
Fig.2 Reverse current vs. Reverse voltage
0.6
0V
0.5
t
T
D = —t
T
Tj = 125°C
0.4
0.3
0.2
D=5/6
D=2/3
D=1/2
sin(θ=180˚)
0.1
0
0 0.05 0.10 0.15 0.20 0.25
Forward current IF (A)
Fig3. Forward power dissipation vs. Forward current
0
0 10 20 30 40
Reverse voltage VR (V)
Fig4. Reverse power dissipation vs. Reverse voltage
Rev.2, Nov. 2002, page 3 of 3
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet HRC0203C.PDF ] | |
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