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IS23SC1604 Schematic ( PDF Datasheet ) - ISSI

Teilenummer IS23SC1604
Beschreibung 16-KBIT SECURED SERIAL EEPROM
Hersteller ISSI
Logo ISSI Logo 




Gesamt 18 Seiten
IS23SC1604 Datasheet, Funktion
IS23SC1604
16-KBIT SECURED SERIAL EEPROM
ISSI®
ADVANCE INFORMATION
APRIL 2003
FEATURES
• 16K serial EEPROM with security features
• Comply with ISO/IEC Standard 7816-3
Synchronous Protocol
• Store and validate security codes
• Four protected application zones
• Provide transport code security
• Single 5V power supply for read/write/erase
operations
• Low power operation:
— 15 µA (max.) standby current
— 3 mA (max.) read current at 300 KHz
— 4 mA (max.) write/erase current
• 2 ms read access time at 300 KHz;
5 ms write cycle time
• 300 KHz serial clock rate
www.DataSheet4U.com
• High ESD protection: > 4 KV
• High reliability:
— 1,000,000 erase/write cycles
— 10 years data retention
• Standard CMOS Process
• Wide operating temperature range
— 0°C to +70°C Commercial; –40°C to +85°C
Industrial
• Data access only after validation of security
code
• Permanent invalidation of device upon eight
consecutive failed attempts to enter the correct
security code
• Separate read/write/erase access protections
for each application zone
• Allow the memory chip to be personalized if the
internal security fuse is not blown. If the internal
security fuse is blown, maximum security protection
of the memory will always be enabled.
DESCRIPTION
IS23SC1604 is a low-cost, low-power, highly secured
16K bits (2K x 8) serial EEPROM. It is fabricated using
ISSI’s advanced CMOS technology.
The security features of IS23SC1604 provide high levels
of memory security protection for smart card applications.
The memory is partitioned into four application zones.
Each individual application zone is protected by multiple
security codes from unauthorized read/write/erase
access to the zone. In addition, an internal security fuse
is available for the card issuer to fully personalize the
device before releasing it to customer.
The device also features an internal high-voltage charge
pump for memory programming, 1,000,000 write/erase
cycles and ten years of data retention.
Pin Configuration: 8-pin Plastic DIP
Vcc
RST
CLK
FUS
C1
C2
C3
C4
C5 GND
C6 NC
C7 I/O
C8 PGM
Copyright © 2003 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability
arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on any
published information and before placing orders for products.
Integrated Silicon Solution, Inc. — 1-800-379-4774
ADVANCE INFORMATION Rev. 00E
04/10/03
1






IS23SC1604 Datasheet, Funktion
IS23SC1604
ISSI®
ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings(1)
Symbol
Parameter
Min. Max. Unit
Vcc Supply Voltage
–0.3
6
V
VI / VO
Input/Output Voltage
–0.3
6
V
TSTG
Storage Temperature
–40
125
°C
PMAX
Power Dissipation
60 mV
Note:
1. Stress greater than those listed under Absolute Maximum Ratings may cause permanent damage to the device.
This is a stress rating only and functional operation of the device at these or any other conditions above those
indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions
for extended periods may affect reliability.
Operating Range
Range
Commercial
Industrial
Ambient Temperature
0 to +70°C
–40 to +85°C
Vcc
5V
5V
Capacitance (1,2)
Symbol
Parameter
Conditions
Max.
CIN Input Capacitance VIN = 0V
5
COUT
Output Capacitance
VOUT = 0V
8
Notes:
1. Tested initially and after any design or process changes that may affect these parameters.
2. Test conditions: TA = 25°C, Vcc = 5.0V + 10%; GND = 0V, f = 1 MHz.
Unit
pF
pF
DC Electrical Characteristics(1) (TA = 0°C to 70°C, Vcc = 5.0 + 10%, GND = 0V )
Symbol
Parameter
Test Conditions Min.
Typ.
Vcc Supply Voltage
4.5
5.0 5.5
ICC
Supply Read/Compare Current
TA = 25°C,
——
FCLK = 300 KHz
ICCP
Supply Write/Erase Current
TA = 25°C
——
ICCSB
Standby Supply Current
TA = 25°C,
——
RST = 5V;FUS, CLK, PGM = 0V, IIO = 0 mA
VIL Input Low Level
–0.3 —
VIH Input High Level
2.0 —
VOL Output Low Level
IOL = 1 mA
——
ILI Input Leakage Current
——
ILH I/O Leakage Current
VOH = 5V Open Drain —
Note:
1. There is a internal pull-up on pin RST. There are internal pull-downs on pins FUS, CLK, and PGM
Max.
V
3.0
4.0
15.0
0.8
Vcc + 0.3
0.4
50
50
Unit
mA
mA
µA
V
V
V
µA
µA
6 Integrated Silicon Solution, Inc. — 1-800-379-4774
ADVANCEINFORMATION Rev. 00E
04/10/03

6 Page









IS23SC1604 pdf, datenblatt
IS23SC1604
ISSI®
IS23SC1604 INTERNAL FLAGS
The IS23SC1604’s internal flags enable/disable the read,
write, and erase access to application zones (Refer to
Memory Access Table). All the flags are clear upon power-on
reset (POR).The flags can be set to logic ‘1’ state by validating
the corresponding security code through the validation process.
Once the flag is enabled (‘1’ state), it cannot be cleared by
any operations except POR.
Security Code Valid Comparison Flag (SV)
This flag is set to ‘1’ after the Security Code (SC) is validated
(see Security/Erase Key Code Validation). This flag pro-
tects an unpersonalized card from unauthorized usage. If
the card has already been personalized, this flag provides
master protection for the application zones (refer to Memory
Access Table).
Application Zone 1 Security Code
Valid Comparison Flag (S1)
This flag is set to ‘1’ after the Application Zone 1 Security
Code (SC1) is validated (see Security/Erase Key Code
Validation). This flag provides access protection for Appli-
cation Zone 1 (refer to Memory Access Table).
Application Zone ‘m’ Security Code
Valid Comparison Flag (Sm) where ‘m’ = 2, 3 or 4.
This flag is set to ‘1’ after the Application Zone ‘m’ Security
Code is validated (see Security/Erase Key Code Valida-
tion). This flag provides access protection for Application
Zone ‘m’ (refer to Memory Access Table).
Application Zone ‘n’ Erase Key
Valid Comparison Flag (Sn) where ‘n’ = 1, 2, 3 or 4.
This flag is set to ‘1’ after the Application Zone ‘n’ Erase
Key is validated (see Write/Erase Timing Diagram).This flag
provides protection for Application Zone ‘n’ from unautho-
rized erasure of the zone (refer to Memory Access Table).
Application Zone ‘n’ write flag (Pn)
where ‘n’ = 1, 2, 3 or 4.
This flag is set to ‘1’ if the first bit of Application Zone ‘n’ is
‘1’ (Bit address: 216 for zone 1, 9816 for zone 2, 11904 for
zone 3, or 13992 for zone 4).This flag enables write access
to the corresponding application zone (refer to Memory
Access Table).
Application Zone ‘n’ read flag (Rn)
where ‘n’ = 1, 2, 3 or 4.
This flag is set to ‘1’ when the second bit of Application
Zone ‘n’ is ‘1’ (Bit address: 217 for zone 1, 9817 for zone 2,
11905 for zone 3, or 13993 for zone 4). This flag enables
read access to the corresponding application zone (refer
to Memory Access Table).
12 Integrated Silicon Solution, Inc. — 1-800-379-4774
ADVANCEINFORMATION Rev. 00E
04/10/03

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