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A20M18LVR Schematic ( PDF Datasheet ) - Advanced Power Technology

Teilenummer A20M18LVR
Beschreibung POWER MOS V MOSFET
Hersteller Advanced Power Technology
Logo Advanced Power Technology Logo 




Gesamt 4 Seiten
A20M18LVR Datasheet, Funktion
APT20M18B2VR
A20M18LVR
200V 100A 0.018
POWER MOS V® MOSFET
B2VR
Power MOS V® is a new generation of high voltage N-Channel enhancement
mode power MOSFETs. This new technology minimizes the JFET effect,
increases packing density and reduces the on-resistance. Power MOS V®
also achieves faster switching speeds through optimized gate layout.
T-MAX
TO-264
LVR
• TO-264 MAX Package
• Faster Switching
• Lower Leakage
• Avalanche Energy Rated
D
G
MAXIMUM RATINGS
Symbol Parameter
www.DataSheet4U.com
VDSS
ID
IDM
VGS
VGSM
PD
Drain-Source Voltage
Continuous Drain Current 6 @ TC = 25°C
Pulsed Drain Current 1
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
Total Power Dissipation @ TC = 25°C
Linear Derating Factor
TJ,TSTG
TL
IAR
EAR
EAS
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
Avalanche Current 1 (Repetitive and Non-Repetitive)
Repetitive Avalanche Energy 1
Single Pulse Avalanche Energy 4
S
All Ratings: TC = 25°C unless otherwise specified.
APT20M18B2VR_LVR UNIT
200 Volts
100
Amps
400
±30 Volts
±40
625 Watts
5.00 W/°C
-55 to 150
300
°C
100 Amps
50
3000
mJ
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN TYP MAX
BVDSS
RDS(on)
IDSS
IGSS
VGS(th)
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)
Drain-Source On-State Resistance 2 (VGS = 10V, ID = 50A)
Zero Gate Voltage Drain Current (VDS = 200V, VGS = 0V)
Zero Gate Voltage Drain Current (VDS = 160V, VGS = 0V, TC = 125°C)
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
Gate Threshold Voltage (VDS = VGS, ID = 2.5mA)
200
2
0.018
25
250
±100
4
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
UNIT
Volts
Ohms
µA
nA
Volts
APT Website - http://www.advancedpower.com





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