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PDF ZUMT491 Data sheet ( Hoja de datos )
| Número de pieza | ZUMT491 | |
| Descripción | SOT323 NPN SILICON PLANAR HIGH PERFORMANCE TRANSISTOR | |
| Fabricantes | Zetex Semiconductors | |
| Logotipo |  |
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SOT323 NPN SILICON PLANAR
HIGH PERFORMANCE TRANSISTOR
ISSUE 2 – MARCH 2007
FEATURES
* Extremely low saturation voltage
* 500mW power dissipation
* 1 Amp continuous collector current (IC)
APPLICATIONS
* Ideally suited for space / weight critical applications
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
Collector Base Voltage
VCBO
Collector Emitter Voltage
VCEO
Emitter Base Voltage
VEBO
Peak Pulse Current
ICM
Continuous Collector Current
IC
Base Current
IB
Power Dissipation at Tamb=25°C
Ptot
Operating and Storage Temperature Range Tj:Tstg
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).
PARAMETER
SYMBOL MIN. TYP. MAX.
Collector Base
Breakdown Voltage
V(BR)CBO
80
Collector Emitter
Breakdown Voltage
VCEO(sus) 60
Emitter Base
Breakdown Voltage
V(BR)EBO
5
Collector Cut Off
Current
ICBO
100
Collector Cut Off
Current
ICES
100
Emitter Cut Off Current IEBO
Collector Emitter
Saturation Voltage
VCE(sat)
100
0.25
0.50
Base Emitter
Saturation Voltage
VBE(sat)
1.1
Base Emitter
Turn On Voltage
VBE(on)
1.0
ZUMT491
CE
B
SOT323
VALUE
80
60
5
2
1
200
500
-55 to +150
UNIT
V
V
V
A
A
mA
mW
°C
UNIT
V
CONDITIONS.
IC=100µA, IE=0
V IC=10mA*, IB=0
V IE=100µA, IC=0
nA VCB=60V
nA VCE=60V
nA VEB=4V, IC=0
V IC=500mA, IB=50mA*
V IC=1A, IB=100mA*
V IC=1A, IB=100mA*
V IC=1A, VCE=5V*
* Measured under pulsed conditions. Pulse width 300µS. Duty cycle Յ2%.
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