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908E625 Schematic ( Datenblatt PDF ) - Freescale Semiconductor

Teilenummer 908E625
Beschreibung Integrated Quad Half H-Bridge
Hersteller Freescale Semiconductor
Logo Freescale Semiconductor Logo 

Gesamt 48 Seiten
		
908E625 Datasheet, Funktion
Freescale Semiconductor
Technical Data
MM908E625
Rev 4.0, 09/2005
Integrated Quad Half H-Bridge
with Power Supply, Embedded
MCU, and LIN Serial
Communication
The 908E625 is an integrated single-package solution including a
high-performance HC08 microcontroller with a SMARTMOSTM
analog control IC. The HC08 includes Flash Memory, a timer,
Enhanced Serial Communications Interface (ESCI), an Analog-to-
Digital Converter (ADC), Serial Peripheral Interface (SPI) (only
internal), and an Internal Clock Generator (ICG) module. The analog
control die provides fully protected H-Bridge/high-side outputs,
voltage regulator, autonomous watchdog with cyclic wake-up, and
Local Interconnect Network (LIN) physical layer.
The single-package solution, together with LIN, provides optimal
application performance adjustments and space-saving PCB design.
It is well suited for the control of automotive mirror, door lock, and
light-levelling applications.
908E625
H-BRIDGE POWER SUPPLY WITH
EMBEDDED MCU AND LIN
DWB SUFFIX
98ARL105910
54-TERMINAL SOICWB-EP
Features
www.DataSheet4U.com
• High-Performance M68HC908EY16 Core
• 16 K Bytes of On-Chip Flash Memory
• 512 Bytes of RAM
• Internal Clock Generation Module
• Two 16-bit, 2-Channel Timers
• 10-Bit Analog-to-Digital Converter
• LIN Physical Layer
• Autonomous Watchdog with Cyclic Wakeup
• Three Two-Terminal Hall-Effect Sensor Input Ports
• One Analog Input with Switchable Current Source
• Four Low RDS(ON) Half-Bridge Outputs
• One Low RDS(ON) High-Side Output
• 13 Micro Controller I/Os
LIN
VREFH
VDDA
EVDD
VDD
3 908E625
VSUP
VREFL
VSSA
EVSS
VSS
RST
RST_A
IRQ
IRQ_A
SS
PTB1/AD1
RXD
PTE1/RXD
PTD1/TACH1
FGEN
BEMF
PTD0/TACH0/BEMF
GND EP
2
ORDERING INFORMATION
Device
MM908E625ACDWB
Temperature
Range (TA)
-40°C to 85°C
Package
54 SOICW
EP
HB1
HB2
HB3
HB4
HS
HVDD
H1
H2
H3
PA1
Port A I/Os
Port B I/Os
Port C I/Os
M
M
M
4 Half-Bridges
Controlling
3 Loads
High-Side
Output
Switchable Internal
VDD Output
Three
2-Terminal Hall-Effect
Sensor Inputs
Analog Input with
Current Source
Microcontroller
Ports
Figure 1. 908E625 Simplified Application Diagram
* This document contains certain information on a new product.
Specifications and information herein are subject to change without notice.
© Freescale Semiconductor, Inc., 2005. All rights reserved.






908E625 Datasheet, Funktion
MAXIMUM RATINGS
MAXIMUM RATINGS
Table 2. Maximum Ratings
All voltages are with respect to ground unless otherwise noted. Exceeding these ratings may cause a malfunction or
permanent damage to the device.
Ratings
Symbol
Value
Unit
ELECTRICAL RATINGS
Supply Voltage
Analog Chip Supply Voltage under Normal Operation, Steady State
Analog Chip Supply Voltage under Transient Conditions (1)
Microcontroller Chip Supply Voltage
VSUP(SS)
VSUP(PK)
VDD
-0.3 to 28
-0.3 to 40
-0.3 to 6.0
V
Input Terminal Voltage
Analog Chip
Microcontroller Chip
Maximum Microcontroller Current per Terminal
All Terminals Except VDD, VSS, PTA0:PTA6, PTC0:PTC1
Terminals PTA0:PTA6, PTC0:PTC1
Maximum Microcontroller VSS Output Current
Maximum Microcontroller VDD Input Current
LIN Supply Voltage
Normal Operation (Steady-State)
Transient Conditions (1)
ESD Voltage
Human Body Model (HBM)(2)
Machine Model (MM)(3)
Charge Device Model (CDM)(4)
VIN (ANALOG)
VIN (MCU)
-0.3 to 5.5
VSS-0.3 to VDD+0.3
IPIN(1)
IPIN(2)
IMVSS
IMVDD
±15
± 25
100
100
VBUS(SS)
VBUS(DYNAMIC)
VESD
-18 to 28
40
± 3000
± 150
± 500
V
mA
mA
mA
V
V
THERMAL RATINGS
Storage Temperature
Ambient Operating Temperature
Operating Case Temperature (5)
TSTG
TA
TC
-40 to 150
-40 to 85
-40 to 85
°C
°C
°C
Operating Junction Temperature(6)
TJ
-40 to 125
°C
Peak Package Reflow Temperature During Solder Mounting (7)
TSOLDER
245
°C
Notes
1. Transient capability for pulses with a time of t < 0.5 sec.
2. ESD voltage testing is performed in accordance with the Human Body Model (CZAP = 100 pF, RZAP = 1500 )
3. ESD voltage testing is performed in accordance with the Machine Model (CZAP =200 pF, RZAP = 0 )
4. ESD voltage testing is performed in accordance with Charge Device Model, robotic (CZAP =4.0 pF).
5. The limiting factor is junction temperature, taking into account the power dissipation, thermal resistance, and heat sinking.
6. The temperature of analog and MCU die is strongly linked via the package, but can differ in dynamic load conditions, usually because
of higher power dissipation on the analog die. The analog die temperature must not exceed 150°C under these conditions.
7. Terminal soldering temperature is for 10 seconds maximum duration. Not designed for immersion soldering. Exceeding these limits may
cause malfunction or permanent damage to the device.
908E625
6
Analog Integrated Circuit Device Data
Freescale Semiconductor

6 Page







908E625 pdf, datenblatt
MICROCONTROLLER PARAMETRICS
MICROCONTROLLER PARAMETRICS
Table 5. Microcontroller Description
For a detailed microcontroller description, refer to the MC68HC908EY16 data sheet.
Module
Description
Core
High-Performance HC08 Core with a Maximum Internal Bus Frequency of 8.0 MHz
Timer
Two 16-Bit Timers with Two Channels (TIM A and TIM B)
Flash
16 K Bytes
RAM
512 Bytes
ADC
10-Bit Analog-to-Digital Converter
SPI SPI Module
ESCI
Standard Serial Communication Interface (SCI) Module
Bit-Time Measurement
Arbitration
Prescaler with Fine Baud-Rate Adjustment
ICG Internal Clock Generation Module (25% Accuracy with Trim Capability to 2%)
BEMF Counter
Special Counter for SMARTMOS™ BEMF Output
908E625
12
Analog Integrated Circuit Device Data
Freescale Semiconductor

12 Page


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