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Teilenummer | IRG4BC10KDPBF |
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Beschreibung | HEXFET Power MOSFET | |
Hersteller | International Rectifier | |
Logo | ||
Gesamt 10 Seiten www.DataSheet4U.com
PD -94903
IRG4BC10KDPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
• High short circuit rating optimized for motor control,
tsc =10µs, @360V VCE (start), TJ = 125°C,
VGE = 15V
• Combines low conduction losses with high
switching speed
• Tighter parameter distribution and higher efficiency
than previous generations
• IGBT co-packaged with HEXFREDTM ultrafast,
ultrasoft recovery antiparallel diodes
• Lead-Free
C
G
E
n-channel
Short Circuit Rated
UltraFast IGBT
VCES = 600V
VCE(on) typ. = 2.39V
@VGE = 15V, IC = 5.0A
Benefits
• Latest generation 4 IGBTs offer highest power density
motor controls possible
• HEXFREDTM diodes optimized for performance with IGBTs.
Minimized recovery characteristics reduce noise, EMI and
switching losses
TO-220AB
Absolute Maximum Ratings
Parameter
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
IF @ TC = 100°C
IFM
tsc
VGE
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Short Circuit Withstand Time
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw.
Thermal Resistance
RθJC
RθJC
RθCS
RθJA
Wt
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Parameter
Junction-to-Case - IGBT
Junction-to-Case - Diode
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight
Max.
600
9.0
5.0
18
18
4.0
16
10
± 20
38
15
-55 to +150
300 (0.063 in. (1.6mm) from case)
10 lbf•in (1.1 N•m)
Units
V
A
µs
V
W
°C
Min.
–––
–––
–––
–––
–––
Typ.
–––
–––
0.50
–––
2 (0.07)
Max.
3.3
7.0
–––
80
–––
Units
°C/W
g (oz)
1
12/23/03
IRG4BC10KDPbF
2.0 RG = O50hΩm
TJ = 150° C
VCC = 480V
VGE = 15V
1.5
1.0
0.5
0.0
0
2468
I C , Collector Current (A)
10
Fig. 11 - Typical Switching Losses vs.
Collector-to-Emitter Current
100
100
VTGJE
= 20V
= 125 oC
10
SAFE OPERATING AREA
1
1 10 100
VCE, Collector-to-Emitter Voltage (V)
1000
Fig. 12 - Turn-Off SOA
10 TJ = 150°C
TJ = 125°C
TJ = 25°C
1
0.1
0.0 1.0 2.0 3.0 4.0 5.0 6.0
Forward Voltage Drop - V FM(V)
Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current
6 www.irf.com
6 Page | ||
Seiten | Gesamt 10 Seiten | |
PDF Download | [ IRG4BC10KDPBF Schematic.PDF ] |
Teilenummer | Beschreibung | Hersteller |
IRG4BC10KDPBF | HEXFET Power MOSFET | International Rectifier |
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