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PDF XB01SB04A2BR Data sheet ( Hoja de datos )
| Número de pieza | XB01SB04A2BR | |
| Descripción | Schottky Barrier Diode | |
| Fabricantes | Torex Semiconductor | |
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XB01SB04A2BR
Schottky Barrier Diode 1A, 40V Type
ETR1601_001
■GENERAL DESCRIPTION
XB01SB04A2BR employs 1A level of a schottky diode in a small package equivalent to SOD-123 package. It is suitable for
compact, low profile circuit designs. By giving the series low VF and low IR characteristics, it minimizes power supply loss.
■APPLICATIONS
●Rectification of compact DC/DC converter
●Surge absorption caused by counter force of
compact motors
●Energy-saving for notebook PCs, hand-set
●Protection against reverse connection of
battery
■FEATURES
1A, 40V Type
Low VF 0.49V @1A (TYP.)
Low IR 4μA @40V (TYP.)
Small Package : SOD-123
■ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
www.DataSheet4U.com
Repetitive Peak Reverse Voltage
Reverse Voltage (DC)
Forward Current (Average)
Non Continuous Forward Surge Current*1
Junction Temperature
VRM
VR
IF(AV)
IFSM
Tj
Storage Temperature Range
Tstg
*1: Non continuous high amplitude 60Hz half-sine wave.
RATINGS
40
40
1
10
125
-55~+150
Ta = 25℃
UNIT
V
V
A
A
℃
℃
■ELECTRICAL CHARACTERISTICS
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
LIMITS
TYP.
Forward Voltage (DC)
Reverse Current (DC)
VF
IR
IF=1A
VR=40V
－ 0.49
－4
Inter-Terminal Capacity
Ct
VR=10V, f=1MHz
－ 35
Reverse Recovery Current *2
trr
IF=IR=10mA, irr=1mA, RL=100Ω
－
25
Note) 1.This product has a weakness for an electroshock such as electrostatic.
Please be careful of an electrification to human body and an electric leakage in the application.
2. *2: trr measurement circuit
MAX.
0.54
200
－
－
Ta=25℃
UNITS
V
μA
pF
ns
Bias
Pulse Generatrix
A
Oscilloscope
IF
trr
0
irr
IR
t
1/4
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet XB01SB04A2BR.PDF ] | |
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