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PDF TS25P07G Data sheet ( Hoja de datos )
| Número de pieza | TS25P07G | |
| Descripción | (TS25P01G - TS25P07G) 25A Single-Phase Glass Passivated Bridge Rectifier | |
| Fabricantes | Silicon Standard | |
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TS25P01G - 07G
25A Single-phase Glass-passivated Bridge Rectifier
Voltage Range 50 to 1000 Volts
FEATURES
UL Recognized File # E-96005
Glass passivated junction
Ideal for printed circuit board
Reliable low cost construction
Plastic material has Underwriters Laboratory
Flammability Classification 94V-0
Surge overload rating to 300 amperes peak
High case dielectric strength of 2000 VRMS
MECHANICAL DATA
Case: Molded plastic
Terminals: Leads solderable per
MIL-STD-750, method 2026
Weight: 0.3 ounce, 8 grams
Mounting torque: 8.17 in. lbs. max.
TS-6P
C .118(3.0)
X450
1.193(30.3)
1.169(29.7)
.189(4.8)
.173(4.4)
.150(3.8)
.134(3.4)
.106(2.7)
.091(2.3)
.094(2.4)
.079(2.0)
.043(1.1)
.035(0.9)
.799(20.3)
.776(19.7)
.189(4.8)
.441(11.2)
.425(10.8)
.134(3.4)
.122(3.1)
.165(4.2) .709(18.0)
.150(3.8) .669(17.0)
.114(2.9)
.098(2.5)
.303
(7.7)
.287
(7.3)
.402(10.2)
.386(9.8)
.303
(7.7)
.287
(7.3)
.031(0.7)
.024(0.6)
Dimensions in inches and (millimeters)
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RoHS compliant.
Maximum Ratings and Electrical Characteristics
Rating at 25°C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Parameter
Symbol TS25P TS25P TS25P TS25P TS25P TS25P TS25P Units
01G 02G 03G 04G 05G 06G 07G
Maximum Recurrent Peak Reverse Voltage VRRM 50 100 200 400 600 800 1000 V
Maximum RMS Voltage
VRMS 35 70 140 280 420 560 700 V
Maximum DC Blocking Voltage
VDC 50 100 200 400 600 800 1000 V
Maximum Average Forward Rectified Current
See Fig. 1
I(AV)
25.0
A
Peak Forward Surge Current, 8.3 ms Single
Half Sine-wave Superimposed on Rated
Load (JEDEC method )
IFSM
300
A
Maximum Instantaneous Forward Voltage
@25A
VF
1.1
V
Maximum DC Reverse Current @ TA=25°C
at Rated DC Blocking Voltage @ TA=125°C
IR
10.0 uA
500 uA
Typical Thermal Resistance (Note)
RθJC
0.6 °C/W
Operating Temperature Range
TJ
-55 to +150
°C
Storage Temperature Range
TSTG
-55 to + 150
°C
Note: Thermal resistance from junction to case with device mounted on 5” x 7” x 0.25” Al-plate heatsink.
2/26/2005 Rev.1.01
www.SiliconStandard.com
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