Datenblatt-pdf.com


FDS6676AS Schematic ( PDF Datasheet ) - Fairchild Semiconductor

Teilenummer FDS6676AS
Beschreibung 30V N-Channel PowerTrench SyncFET
Hersteller Fairchild Semiconductor
Logo Fairchild Semiconductor Logo 




Gesamt 8 Seiten
FDS6676AS Datasheet, Funktion
November 2005
www.DataSheet4U.com
FDS6676AS
30V N-Channel PowerTrench® SyncFET
General Description
The FDS6676AS is designed to replace a single SO-8
MOSFET and Schottky diode in synchronous DC:DC
power supplies. This 30V MOSFET is designed to
maximize power conversion efficiency, providing a low
RDS(ON) and low gate charge. The FDS6676AS
includes an integrated Schottky diode using Fairchild’s
monolithic SyncFET technology.
Applications
DC/DC converter
Low side notebook
Features
14.5 A, 30 V. RDS(ON) max= 6.0 m@ VGS = 10 V
RDS(ON) max= 7.25 m@ VGS = 4.5 V
Includes SyncFET Schottky body diode
Low gate charge (45nC typical)
High performance trench technology for extremely low
RDS(ON) and fast switching
High power and current handling capability
D
D
D
D
SO-8
G
SS
S
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS
VGSS
ID
PD
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
Power Dissipation for Single Operation
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1c)
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient
RθJC Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
FDS6676AS
FDS6676AS
13’’
FDS6676AS
FDS6676AS_NL (Note 3)
13’’
©2004 Fairchild Semiconductor Corporation
54
63
72
81
Ratings
30
±20
14.5
50
2.5
1.2
1
–55 to +150
50
25
Tape width
12mm
12mm
Units
V
V
A
W
°C
°C/W
Quantity
2500 units
2500 units
FDS6676AS Rev B






FDS6676AS Datasheet, Funktion
Typical Characteristics (continued)
SyncFET Schottky Body Diode
Characteristics
Fairchild’s SyncFET process embeds a Schottky diode in
parallel with PowerTrench MOSFET. This diode exhibits
similar characteristics to a discrete external Schottky
diode in parallel with a MOSFET. Figure 12 shows the
reverse recovery characteristic of the FDS6676AS.
Schottky barrier diodes exhibit significant leakage at high
temperature and high reverse voltage. This will increase
the power in the device.
0.1
0.01
TA = 125oC
0.001
TA = 100oC
10nS/DIV
Figure 12. FDS6676AS SyncFET body diode
reverse recovery characteristic.
For comparison purposes, Figure 13 shows the reverse
recovery characteristics of the body diode of an
equivalent size MOSFET produced without SyncFET
(FDS6676).
0.0001
TA = 25oC
0.00001
0
5 10 15 20 25
VDS, REVERSE VOLTAGE (V)
Figure 14. SyncFET body diode reverse
leakage versus drain-source voltage and
temperature.
30
10nS/DIV
Figure 13. Non-SyncFET (FDS6676) body
diode reverse recovery characteristic.
FDS6676AS Rev B

6 Page







SeitenGesamt 8 Seiten
PDF Download[ FDS6676AS Schematic.PDF ]

Link teilen




Besondere Datenblatt

TeilenummerBeschreibungHersteller
FDS6676AS30V N-Channel PowerTrench SyncFETFairchild Semiconductor
Fairchild Semiconductor

TeilenummerBeschreibungHersteller
CD40175BC

Hex D-Type Flip-Flop / Quad D-Type Flip-Flop.

Fairchild Semiconductor
Fairchild Semiconductor
KTD1146

EPITAXIAL PLANAR NPN TRANSISTOR.

KEC
KEC


www.Datenblatt-PDF.com       |      2020       |      Kontakt     |      Suche