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PDF FDN352AP Data sheet ( Hoja de datos )

Número de pieza FDN352AP
Descripción PowerTrench MOSFET
Fabricantes Fairchild Semiconductor 
Logotipo Fairchild Semiconductor Logotipo



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No Preview Available ! FDN352AP Hoja de datos, Descripción, Manual

August 2005
FDN352AP
Single P-Channel, PowerTrench® MOSFET
Features
–1.3 A, –30V
–1.1 A, –30V
RDS(ON) = 180 m@ VGS = –10V
RDS(ON) = 300 m@ VGS = –4.5V
High performance trench technology for extremely low
RDS(ON).
High power version of industry Standard SOT-23 package.
Identical pin-out to SOT-23 with 30% higher power handling
capability.
Applications
Notebook computer power management
General Description
This P-Channel Logic Level MOSFET is produced using Fair-
child Semiconductor advanced Power Trench process that has
been especially tailored to minimize the on-state resistance and
yet maintain low gate charge for superior switching perfor-
mance.
These devices are well suited for low voltage and battery pow-
ered applications where low in-line power loss is needed in a
very small outline surface mount package.
www.DataSheet4U.com
D
G
SuperSOT™-3
S
D
GS
Absolute Maximum Ratings TA = 25°C unless otherwise noted
Symbol
Parameter
VDSS
VGSS
ID
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
(Note 1a)
PD Power Dissipation for Single Operation
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 1b)
RθJA
RθJC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
Ratings
–30
±25
–1.3
–10
0.5
0.46
–55 to +150
250
75
Package Marking and Ordering Information
Device Marking
52AP
Device
FDN352AP
Reel Size
7’’
Tape width
8mm
Units
V
V
A
W
°C
°C/W
Quantity
3000 units
©2005 Fairchild Semiconductor Corporation
FDN352AP Rev. C1
1
www.fairchildsemi.com

1 page




FDN352AP pdf
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™
FAST
ActiveArray™ FASTr™
Bottomless™ FPS™
Build it Now™ FRFET™
CoolFET™
GlobalOptoisolator™
CROSSVOLTGTO™
DOME™
HiSeC™
EcoSPARK™ I2C™
E2CMOS™
i-Lo
EnSigna™
ImpliedDisconnect™
FACT™
IntelliMAX™
FACT Quiet Series™
Across the board. Around the world.™
The Power Franchise
Programmable Active Droop™
ISOPLANAR™
LittleFET™
MICROCOUPLER™
MicroFET™
MicroPak™
MICROWIRE™
MSX™
MSXPro™
OCX™
OCXPro™
OPTOLOGIC
OPTOPLANAR™
PACMAN™
POP™
Power247™
PowerEdge™
PowerSaver™
PowerTrench
QFET
QS™
QT Optoelectronics™
Quiet Series™
RapidConfigure™
RapidConnect™
µSerDes™
SILENT SWITCHER
SMART START™
SPM™
Stealth™
SuperFET™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic
TINYOPTO™
TruTranslation™
UHC™
UltraFET
UniFET™
VCX™
Wire™
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TOANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOTASSUMEANY LIABILITY
ARISING OUT OF THEAPPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT
CONVEYANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTENAPPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
2. A critical component is any component of a life
systems which, (a) are intended for surgical implant into
support device or system whose failure to perform can
the body, or (b) support or sustain life, or (c) whose
be reasonably expected to cause the failure of the life
failure to perform when properly used in accordance
support device or system, or to affect its safety or
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
effectiveness.
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
FDN352AP Rev. C1
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I16
5 www.fairchildsemi.com

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