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PDF XU1002 Data sheet ( Hoja de datos )
| Número de pieza | XU1002 | |
| Descripción | GaAs MMIC Transmitter | |
| Fabricantes | Mimix Broadband | |
| Logotipo |  |
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18.0-25.0 GHz GaAs MMIC
Transmitter
May 2005 - Rev 13-May-05
Features
Sub-harmonic Transmitter
Integrated IR Mixer, LO Buffer & Output Amplifier
+20.0 dBm Output Third Order Intercept (OIP3)
2.0 dBm LO Drive Level
15.0 dB Image Rejection, 10.0 dB Conversion Gain
100% On-Wafer RF and DC Testing
100% Visual Inspection to MIL-STD-883 Method 2010
Chip Device Layout
U1002
General Description
Mimix Broadband’s 18.0-25.0 GHz GaAs MMIC transmitter has a
+20.0 dBm output third order intercept and 15.0 dB image
rejection across the band.This device is an image reject sub-
harmonic anti-parallel diode mixer followed by a balanced two
stage output amplifier and includes an integrated LO buffer
amplifier.The image reject mixer reduces the need for
Absolute Maximum Ratings
unwanted sideband filtering before the power amplifier.The
Supply Voltage (Vd)
+4.5 VDC
use of a sub-harmonic mixer makes the provision of the LO
easier than for fundamental mixers at these frequencies. I and Q
mixer inputs are provided and an external 90 degree hybrid is
required to select the desired sideband.This MMIC uses Mimix
Broadband’s 0.15 µm GaAs PHEMT device model technology,
and is based upon electron beam lithography to ensure high
repeatability and uniformity.The chip has surface passivation to
Supply Current (Id1,Id2)
Gate Bias Voltage (Vg)
Input Power (IF Pin)
Storage Temperature (Tstg)
Operating Temperature (Ta)
Channel Temperature (Tch)
320, 165 mA
+0.3 VDC
0.0 dBm
-65 to +165 OC
-55 to MTTF Table3
MTTF Table3
protect and provide a rugged part with backside via holes and
gold metallization to allow either a conductive epoxy or
eutectic solder die attach process.This device is well suited for
(3) Channel temperature affects a device's MTTF. It is
recommended to keep channel temperature as low as
possible for maximum life.
Millimeter-wave Point-to-Point Radio, LMDS, SATCOM and VSAT
applications.
Electrical Characteristics (Ambient Temperature T = 25o C)
Parameter
Units Min. Typ. Max.
Frequency Range (RF) Upper Side Band
Frequency Range (RF) Lower Side Band
Frequency Range (LO)
Frequency Range (IF)
Output Return Loss RF (S22)
Small Signal Conversion Gain IF/RF (S21) 2
LO Input Drive (PLO)
Image Rejection 2
Isolation LO/RF @ LOx1/LOx2
Output Third Order Intercept (OIP3) 1,2
Drain Bias Voltage (Vd1)
Drain Bias Voltage (Vd2)
Gate Bias Voltage (Vg1,2)
Supply Current (Id1) (Vd1=3.5V, Vg=-0.3V Typical)
Supply Current (Id2) (Vd2=4.0V, Vg=-0.3V Typical)
(1) Measured using constant current.
(2) Measured using LO Input drive level of +2.0 dBm.
GHz 18.0 - 25.0
GHz 18.0 - 21.0
GHz 7.5
- 11.5
GHz DC - 3.0
dB - 16.0 -
dB - 10.0 -
dBm - +2.0 -
dBc - 15.0 -
dB - 10.0 -
dBm - +20.0 -
VDC - +3.5 +4.5
VDC - +4.0 +4.5
VDC -1.2 -0.3 +0.1
mA - 230 280
mA - 116 140
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 1 of 8
Characteristic Data and Specifications are subject to change without notice. ©2005 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
1 page  
18.0-25.0 GHz GaAs MMIC
Transmitter
May 2005 - Rev 13-May-05
U1002
App Note [1] Biasing - As shown in the bonding diagram, this device is operated by separately biasing Vd1 and Vd2 with Vd1=3.5V,
Id1=230mA and Vd2=4.0V, Id2=116mA. It is also recommended to use active biasing to keep the currents constant as the RF power and
temperature vary; this gives the most reproducible results. Depending on the supply voltage available and the power dissipation constraints,
the bias circuit may be a single transistor or a low power operational amplifier, with a low value resistor in series with the drain supply used
to sense the current.The gate of the pHEMT is controlled to maintain correct drain current and thus drain voltage.The typical gate voltage
needed to do this is -0.3V.Typically the gate is protected with Silicon diodes to limit the applied voltage. Also, make sure to sequence the
applied voltage to ensure negative gate bias is available before applying the positive drain supply.
App Note [2] Bias Arrangement - Each DC pad (Vd1,2 and Vg1,2) needs to have DC bypass capacitance (~100-200 pF) as close to the
device as possible. Additional DC bypass capacitance (~0.01 uF) is also recommended.
MTTF Tables (TBD)
These numbers were calculated based on accelerated life test information and thermal model analysis received from the fabricating foundry.
Backplate
Temperature
55 deg Celsius
75 deg Celsius
95 deg Celsius
Channel
Temperature
deg Celsius
deg Celsius
deg Celsius
Rth
MTTF Hours
FITs
C/W E+ E+
C/W E+ E+
C/W E+ E+
Bias Conditions: Vd1=3.5V, Vd2=4.0V, Id1=230 mA, Id2=116 mA
Typical Application
XU1002
XB1004
XP1013
IF IN
17.7-19.7 GHz
Sideband
Reject
RF Out
17.7-19.7 GHz
LO(+2.0dBm)
7.85-8.85 GHz (USB Operation)
9.85-10.85 GHz (LSB Operation)
Mimix Broadband MMIC-based 18.0-25.0 GHz Transmitter Block Diagram
(Changing LO and IF frequencies as required allows design to operate as high as 25.0 GHz)
Mimix Broadband's 18.0-25.0 GHz XU1002 GaAs MMIC Transmitter can be used in saturated radio applications and linear modulation
schemes up to 16 QAM.The transmitter can be used in upper and lower sideband applications from 18.0-25.0 GHz.
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 5 of 8
Characteristic Data and Specifications are subject to change without notice. ©2005 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet XU1002.PDF ] | |
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