Datenblatt-pdf.com


XP1000 Schematic ( PDF Datasheet ) - Mimix Broadband

Teilenummer XP1000
Beschreibung GaAs MMIC Power Amplifier
Hersteller Mimix Broadband
Logo Mimix Broadband Logo 




Gesamt 6 Seiten
XP1000 Datasheet, Funktion
17.0-24.0 GHz GaAs MMIC
Power Amplifier
May 2005 - Rev 05-May-05
Features
High Linearity Output Amplifier
Balanced Design Provides Good Input/Output Match
On-Chip Temperature Compensated
Output Power Detector
19.0 dB Small Signal Gain
+36.0 dBm Third Order Intercept (OIP3)
100% On-Wafer RF, DC and Output Power Testing
100% Visual Inspection to MIL-STD-883
Method 2010
Chip Device Layout
P1000
P1000
General Description
Mimix Broadband s two stage 17.0-24.0 GHz GaAs MMIC
power amplifier is optimized for linear operation with a
third order intercept point of +36.0 dBm.The device also
includes Lange couplers to achieve good input/output
return loss and an on-chip temperature compensated output
power detector.This MMIC uses Mimix Broadband s 0.15 m
’µ
GaAs PHEMT device model technology, and is based upon
electron beam lithography to ensure high repeatability and
uniformity.The chip has surface passivation to protect and
www.DataSheet4U.comprovide a rugged part with backside via holes and gold
metallization to allow either a conductive epoxy or eutectic
solder die attach process.This device is well suited for
Millimeter-wave Point-to-Point Radio, LMDS, SATCOM and VSAT
applications.
Absolute Maximum Ratings
Supply Voltage (Vd)
Supply Current (Id)
Gate Bias Voltage (Vg)
Input Power (Pin)
Storage Temperature (Tstg)
Operating Temperature (Ta)
Channel Temperature (Tch)
+6.0 VDC
700 mA
+0.3 VDC
+9.0 dBm
-65 to +165 OC
-55 to MTTF Table4
MTTF Table4
(4) Channel temperature affects a device's MTTF. It is
recommended to keep channel temperature as low as
possible for maximum life.
Electrical Characteristics (Ambient Temperature T = 25 oC)
Parameter
Frequency Range (f )
Input Return Loss (S11)
Output Return Loss (S22)
Small Signal Gain (S21)
Gain Flatness (S21)
Reverse Isolation (S12)
Output Power for 1 dB Compression (P1dB)2
Output Third Order Intercept Point (OIP3)1,2
Drain Bias Voltage (Vd1,2,3,4) (Vd5 [Det], Rd=3-6K)
Gate Bias Voltage (Vg1,2,3,4)
Supply Current (Id) (Vd=5.5V, Vg=-0.5V Typical)
Detector (diff ) Output at 20 dBm3
(1) Measured at +16 dBm per tone output carrier level at 22 GHz.
(2) Measured using constant current.
(3) Measured with either Vd5=I.0V or Vd5=5.5V and Rd=5.6K.
Units
GHz
dB
dB
dB
dB
dB
dBm
dBm
VDC
VDC
mA
VDC
Min.
17.0
-
-
-
-
-
-
+35.0
-
-1.0
-
-
Typ.
-
20.0
20.0
19.0
+/-1.0
40.0
+25.0
+36.0
+5.5
-0.5
430
0.28
Max.
24.0
-
-
-
-
-
-
-
+5.6
0.0
650
-
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 1 of 6
Characteristic Data and Specifications are subject to change without notice. 2005 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purcha©sing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.






XP1000 Datasheet, Funktion
17.0-24.0 GHz GaAs MMIC
Power Amplifier
May 2005 - Rev 05-May-05
P1000
Handling and Assembly Information
CAUTION! - Mimix Broadband MMIC Products contain gallium arsenide (GaAs) which can be hazardous to the
human body and the environment. For safety, observe the following procedures:
Do not ingest.
Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical
processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed.
Observe government laws and company regulations when discarding this product.This product must be
discarded in accordance with methods specified by applicable hazardous waste procedures.
Life Support Policy - Mimix Broadband's products are not authorized for use as critical components in life support
devices or systems without the express written approval of the President and General Counsel of Mimix
Broadband. As used herein: (1) Life support devices or systems are devices or systems which, (a) are intended for
surgical implant into the body, or (b) support or sustain life, and whose failure to perform when properly used in
accordance with instructions for use provided in the labeling, can be reasonably expected to result in a
significant injury to the user. (2) A critical component is any component of a life support device or system whose
failure to perform can be reasonably expected to cause the failure of the life support device or system, or to
affect its safety or effectiveness.
ESD - Gallium Arsenide (GaAs) devices are susceptible to electrostatic and mechanical damage. Die are supplied
in antistatic containers, which should be opened in cleanroom conditions at an appropriately grounded anti-
static workstation. Devices need careful handling using correctly designed collets, vacuum pickups or, with care,
sharp tweezers.
Die Attachment - GaAs Products from Mimix Broadband are 0.100 mm (0.004") thick and have vias through to the
backside to enable grounding to the circuit. Microstrip substrates should be brought as close to the die as
possible.The mounting surface should be clean and flat. If using conductive epoxy, recommended epoxies are
Ablestick 84-1LMI or 84-1LMIT cured in a nitrogen atmosphere per manufacturer's cure schedule. Apply epoxy
sparingly to avoid getting any on to the top surface of the die. An epoxy fillet should be visible around the total
die periphery. If eutectic mounting is preferred, then a fluxless gold-tin (AuSn) preform, approximately 0.0012
thick, placed between the die and the attachment surface should be used. A die bonder that utilizes a heated
collet and provides scrubbing action to ensure total wetting to prevent void formation in a nitrogen atmosphere
is recommended.The gold-tin eutectic (80% Au 20% Sn) has a melting point of approximately 280 C (Note: Gold
Germanium should be avoided).The work station temperature should be 310 C+- 10 C. Exposure to these
extreme temperatures should be kept to minimum.The collet should be heated, and the die pre-heated to avoid
excessive thermal shock. Avoidance of air bridges and force impact are critical during placement.
Wire Bonding - Windows in the surface passivation above the bond pads are provided to allow wire bonding to
the die's gold bond pads.The recommended wire bonding procedure uses 0.076 mm x 0.013 mm (0.003" x
0.0005") 99.99% pure gold ribbon with 0.5-2% elongation to minimize RF port bond inductance. Gold 0.025 mm
(0.001") diameter wedge or ball bonds are acceptable for DC Bias connections. Aluminum wire should be
avoided.Thermo-compression bonding is recommended though thermosonic bonding may be used providing
the ultrasonic content of the bond is minimized. Bond force, time and ultrasonics are all critical parameters.
Bonds should be made from the bond pads on the die to the package or substrate. All bonds should be as short
as possible.
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 6 of 6
Characteristic Data and Specifications are subject to change without notice. 2005 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purcha©sing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.

6 Page







SeitenGesamt 6 Seiten
PDF Download[ XP1000 Schematic.PDF ]

Link teilen




Besondere Datenblatt

TeilenummerBeschreibungHersteller
XP1000GaAs MMIC Power AmplifierMimix Broadband
Mimix Broadband
XP1000-BDGaAs MMIC Power AmplifierMimix Broadband
Mimix Broadband
XP1001GaAs MMIC Power AmplifierMimix Broadband
Mimix Broadband
XP1003GaAs MMIC Power AmplifierMimix Broadband
Mimix Broadband
XP1003-BDPower AmplifierMimix Broadband
Mimix Broadband

TeilenummerBeschreibungHersteller
CD40175BC

Hex D-Type Flip-Flop / Quad D-Type Flip-Flop.

Fairchild Semiconductor
Fairchild Semiconductor
KTD1146

EPITAXIAL PLANAR NPN TRANSISTOR.

KEC
KEC


www.Datenblatt-PDF.com       |      2020       |      Kontakt     |      Suche