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PDF XD1001 Data sheet ( Hoja de datos )
| Número de pieza | XD1001 | |
| Descripción | GaAs MMIC Distributed Amplifier | |
| Fabricantes | Mimix Broadband | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de XD1001 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
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18.0-50.0 GHz GaAs MMIC
Distributed Amplifier
May 2005 - Rev 01-May-05
D1001
Features
Ultra Wide Band Driver Amplifier
Fiber Optic Modulator Driver
17.0 dB Small Signal Gain
5.0 dB Noise Figure
30 dB Gain Control
+15.0 dBm P1dB Compression Point
100% On-Wafer RF, DC and Output Power Testing
100% Visual Inspection to MIL-STD-883
Method 2010
Chip Device Layout
General Description
Mimix Broadband’s 18.0-50.0 GHz GaAs MMIC
distributed amplifier has a small signal gain of 17.0 dB
with a noise figure of 5.0 dB across the band.The
device also includes 30.0 dB gain control and a +15
dBm P1dB compression point.This MMIC uses Mimix
Broadband’s 0.15 µm GaAs PHEMT device model
technology, and is based upon electron beam
lithography to ensure high repeatability and
uniformity.The chip has surface passivation to protect
andwww.DataSheet4U.com provide a rugged part with backside via holes and
gold metallization to allow either a conductive epoxy
or eutectic solder die attach process.This device is well
suited for microwave, millimeter-wave, wideband
military, and fiber optic applications.
Absolute Maximum Ratings
Supply Voltage (Vd)
Supply Current (Id)
Gate Bias Voltage (Vg)
Input Power (Pin)
Storage Temperature (Tstg)
Operating Temperature (Ta)
Channel Temperature (Tch)
+6.0 VDC
220 mA
+0.3 VDC
+15 dBm
-65 to +165 OC
-55 to MTTF Table2
MTTF Table 2
(2) Channel temperature affects a device's MTTF. It is
recommended to keep channel temperature as low as
possible for maximum life.
o
Electrical Characteristics (Ambient Temperature T = 25 C)
Parameter
Frequency Range (f )
Input Return Loss (S11)
Output Return Loss (S22)
Small Signal Gain (S21)
Gain Flatness (∆S21)
Gain Control
Reverse Isolation (S12)
Noise Figure (NF)
Output Power for 1 dB Compression (P1dB) 1
Output Third Order Intercept Point (OIP3)1
Drain Bias Voltage (Vd)
Gain Control Bias (Vg)
Supply Current (Id) (Vd=5.0V, Vg=0.0 Typical)
Units
GHz
dB
dB
dB
dB
dB
dB
dB
dBm
dBm
VDC
VDC
mA
Min.
18.0
-
-
-
-
-
-
-
-
-
-
-2.0
-
Typ.
-
10.0
11.0
17.0
+/-1.0
30.0
40.0
5.0
+15.0
+24.0
+5.0
0.0
160
Max.
50.0
-
-
-
-
-
-
-
-
-
+5.5
+.01
190
(1) Measured using constant current.
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 1 of 6
Characteristic Data and Specifications are subject to change without notice. ©2005 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
1 page  
18.0-50.0 GHz GaAs MMIC
Distributed Amplifier
May 2005 - Rev 01-May-05
D1001
App Note [1] Biasing - As shown in the bonding diagram, this device is operated with a single drain and a gain control
voltage. Maximum gain bias is nominally Vd=5.0V, Vg=0V, Id=160mA. Gain can be adjusted by changing Vg. It is
recommended to use active biasing to keep the currents constant as the RF power and temperature vary; this gives the
most reproducible results. Depending on the supply voltage available and the power dissipation constraints, the bias
circuit may be a single transistor or a low power operational amplifier, with a low value resistor in series with the drain
supply used to sense the current.The gate of the pHEMT is controlled to maintain correct drain current and thus drain
voltage.The typical gate voltage needed to do this is 0.0V.Typically the gate is protected with Silicon diodes to limit the
applied voltage. Also, make sure to sequence the applied voltage to ensure negative gate bias is available before
applying the positive drain supply.
App Note [2] Bias Arrangement - Each DC pad (Vd and Vg) needs to have DC bypass capacitance (~100-200 pF) as
close to the device as possible. Additional DC bypass capacitance (~0.01 uF) is also recommended.
MTTF Table (TBD)
These numbers were calculated based on accelerated life test information and thermal model analysis received from the fabricating foundry.
Backplate
Temperature
55 deg Celsius
75 deg Celsius
95 deg Celsius
Channel
Temperature
deg Celsius
deg Celsius
deg Celsius
Rth
MTTF Hours
FITs
C/W E+ E+
C/W E+ E+
C/W E+ E+
Bias Conditions: Vd=5.0V, Id=160 mA
Device Schematic
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 5 of 6
Characteristic Data and Specifications are subject to change without notice. ©2005 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet XD1001.PDF ] | |
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