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PDF XB1006 Data sheet ( Hoja de datos )
| Número de pieza | XB1006 | |
| Descripción | GaAs MMIC Buffer Amplifier | |
| Fabricantes | Mimix Broadband | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de XB1006 (archivo pdf) en la parte inferior de esta página. Total 14 Páginas | ||
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18.0-38.0 GHz GaAs MMIC
Buffer Amplifier
April 2005 - Rev 01-Apr-05
B1006
Features
High Dynamic Range/Positive Gain Slope
Excellent LO Driver/Buffer Amplifier
Low Noise or Power Bias Configurations
21.0 dB Small Signal Gain
3.2 dB Noise Figure at Low Noise Bias
+15 dBm P1dB Compression Point at Power Bias
100% On-Wafer RF, DC and Noise Figure Testing
100% Visual Inspection to MIL-STD-883
Method 2010
Chip Device Layout
General Description
Mimix Broadband’s three stage 18.0-38.0 GHz GaAs
MMIC buffer amplifier has a small signal gain of 21.0 dB
Absolute Maximum Ratings
with a positive gain slope, and a noise figure of 3.2 dB
across the band.This MMIC uses Mimix Broadband’s
0.15 µm GaAs PHEMT device model technology, and is
based upon electron beam lithography to ensure high
repeatability and uniformity.The chip has surface
passivation to protect and provide a rugged part with
backsidewww.DataSheet4U.com via holes and gold metallization to allow
either a conductive epoxy or eutectic solder die attach
process.This device is well suited for Millimeter-wave
Point-to-Point Radio, LMDS, SATCOM and VSAT
Supply Voltage (Vd)
Supply Current (Id)
Gate Bias Voltage (Vg)
Input Power (Pin)
Storage Temperature (Tstg)
Operating Temperature (Ta)
Channel Temperature (Tch)
+6.0 VDC
120 mA
+0.3 VDC
+5 dBm
-65 to +165 OC
-55 to MTTF Table5
MTTF Table5
(5) Channel temperature affects a device's MTBF. It is
recommended to keep channel temperature as low as
possible for maximum life.
applications.
Electrical Characteristics (Ambient Temperature T = 25 oC)
Parameter
Units Min. Typ.
Frequency Range (f )
Input Return Loss (S11)3
GHz 18.0
-
dB 4.0 14.0
Output Return Loss (S22) 3
dB 7.0 12.0
Small Signal Gain (S21)3
dB 19.0 21.0
Gain Flatness (∆S21)
Reverse Isolation (S12)3
Noise Figure (NF)4
dB - +/-2.0
dB 40.0 50.0
dB - 3.2
Output Power for 1 dB Compression (P1dB) 1,2,3
dBm - +15.0
Output Third Order Intercept Point (OIP3)1,2,3
Saturated Output Power (Psat)1,2,3
dBm - +25.0
dBm +14.0 +18.0
Drain Bias Voltage (Vd1,2)
VDC - +3.5
Gate Bias Voltage (Vg1,2)
VDC -1.2 -0.3
Supply Current (Id) (Vd=3.5V, Vg=-0.3V Typical)
mA - 50
(1) Optional low noise bias Vd1,2=3.5V, Id=50mA will typically yield 3-4dB decreased P1dB and OIP3.
(2) Measured using constant current.
(3) Unless otherwise indicated, min/max over 18.0-38.0 GHz and biased at Vd=5.5V, Id1=50mA, Id2=50mA.
(4) Unless otherwise indicated, min/max over 20.0-38.0 GHz and biased at Vd=3.5V, Id1=25mA, Id2=25mA.
Max.
38.0
-
-
27.0
-
-
4.5
-
-
-
+5.5
+0.1
100
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 1 of 14
Characteristic Data and Specifications are subject to change without notice. ©2005 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
1 page  
18.0-38.0 GHz GaAs MMIC
Buffer Amplifier
April 2005 - Rev 01-Apr-05
Buffer Amplifier Measurements (cont.)
B1006
XB1006_S21 Vd=3.5V, Id1=9mA, Id2=16mA, Id3=27mA
28
26
24
22
20
18
16
14
12
10
8
6
4
2
0
14 16 18 20 22 24 26 28 30 32 34 36 38 40 42 44
Frequency (GHz)
XB1006_S12 Vd=3.5V, Id1=6mA, Id2=16mA, Id3=27mA
0
-5
-10
-15
-20
-25
-30
-35
-40
-45
-50
-55
-60
-65
-70
-75
-80
14 16 18 20 22 24 26 28 30 32 34 36 38 40 42 44
Frequency (GHz)
XB1006_S11 Vd=3.5V, Id1=6mA, Id2=16mA, Id3=27mA
0
-2
-4
-6
-8
-10
-12
-14
-16
-18
-20
-22
-24
-26
-28
-30
-32
-34
-36
-38
14 16 18 20 22 24 26 28 30 32 34 36 38 40 42 44
Frequency (GHz)
XB1006_S22 Vd=3.5V, Id1=6mA, Id2=16mA, Id3=27mA
0
-2
-4
-6
-8
-10
-12
-14
-16
-18
-20
-22
-24
14 16 18 20 22 24 26 28 30 32 34 36 38 40 42 44
Frequency (GHz)
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 5 of 14
Characteristic Data and Specifications are subject to change without notice. ©2005 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
5 Page 
18.0-38.0 GHz GaAs MMIC
Buffer Amplifier
April 2005 - Rev 01-Apr-05
Mechanical Drawing
1.298
(0.051)
0.853
(0.034)
2
0.950
(0.037)
1
1.453
(0.057)
3
B1006
4
0.376
(0.015)
65
0.0
0.0
0.671
(0.026)
1.270
(0.050)
2.000
(0.079)
(Note: Engineering designator is 28LN3UA0102)
Units: millimeters (inches) Bond pad dimensions are shown to center of bond pad.
Thickness: 0.110 +/- 0.010 (0.0043 +/- 0.0004), Backside is ground, Bond Pad/Backside Metallization: Gold
All DC Bond Pads are 0.100 x 0.100 (0.004 x 0.004). All RF Bond Pads are 0.100 x 0.200 (0.004 x 0.008)
Bond pad centers are approximately 0.109 (0.004) from the edge of the chip.
Dicing tolerance: +/- 0.005 (+/- 0.0002). Approximate weight: 1.612 mg.
Bond Pad #1 (RF In)
Bond Pad #2 (Vd1)
Bond Pad #3 (Vd2)
Bond Pad #4 (RF Out)
Bond Pad #5 (Vg2)
Bond Pad #6 (Vg1)
Bias Arrangement
Vd1 Vd2
RF In 1
23
Bypass Capacitors - See App Note [2]
4 RF Out
65
Vg1 Vg2
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 11 of 14
Characteristic Data and Specifications are subject to change without notice. ©2005 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
11 Page | ||
| Páginas | Total 14 Páginas | |
| PDF Descargar | [ Datasheet XB1006.PDF ] | |
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