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PDF 2A8 Data sheet ( Hoja de datos )
| Número de pieza | 2A8 | |
| Descripción | Class A Linear | |
| Fabricantes | Ghz | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de 2A8 (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
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2A8
0.5 Watts, 20 Volts, Class A
Linear to 2000 MHz
GENERAL DESCRIPTION
The 2A8 is a COMMON EMITTER transistor capable of providing 0.5 Watts
of Class A, RF output power at 2000 MHz. This transistor is specifically
designed for general Class A amplifier applicatons. It utilizes gold
metalization and diffused ballasting to provide high reliability and supreme
ruggedness.
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation @ 25oC
5.3 Watts
Maximum Voltage and Current
BVces
Collector to Emitter Voltage
BVebo
Emitter to Base Voltage
Ic Collector Current
50 Volts
3.5 Volts
300 mA
Maximum Temperatures
Storage Temperature
Operating Junction Temperature
- 65 to + 150oC
+ 150oC
CASE OUTLINE
55EU, STYLE 2
ELECTRICAL CHARACTERISTICS @ 25 OC
SYMBOL CHARACTERISTICS
TEST CONDITIONS MIN TYP MAX UNITS
Pout
Pin
Pg
ηc
VSWR1
Power Out @ 1db Comp. Pt.
Power Input
Power Gain
Efficiency
Load Mismatch Tolerance
F = 2.0 GHz
Vcc = 20 Volts
Ic = 150mA
0.5 Watts
0.1 Watts
7.0 9.0
dB
20 %
30:1
BVebo Emitter to Base Breakdown
Ie = 1 mA
3.5
Volts
BVces
Collector to Emitter Breakdown Ic = 10mA
50
Volts
BVceo
Collector to Emitter Breakdown Ic = 10 mA
21
Volts
Hfe DC Current Gain
Vce = 5 V, Ic = 100 mA 20
Cob Capacitance
Vcb = 28V, f = 1 MHz
3.0 4.0
pF
θjc Thermal Resistance
28 33 oC/W
Issue September 1995
GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT
BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS,
THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.
GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet 2A8.PDF ] | |
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