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IRG4PC50UDPBF Schematic ( PDF Datasheet ) - International Rectifier

Teilenummer IRG4PC50UDPBF
Beschreibung INSULATED GATE BIPOLAR TRANSISTOR
Hersteller International Rectifier
Logo International Rectifier Logo 




Gesamt 10 Seiten
IRG4PC50UDPBF Datasheet, Funktion
PD -95185
IRG4PC50UDPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH
UltraFast CoPack IGBT
ULTRAFAST SOFT RECOVERY DIODE
Features
• UltraFast: Optimized for high operating
frequencies 8-40 kHz in hard switching, >200
kHz in resonant mode
• Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
Generation 3
• IGBT co-packaged with HEXFREDTM ultrafast,
ultra-soft-recovery anti-parallel diodes for use in
bridge configurations
• Industry standard TO-247AC package
• Lead-Free
C
G
E
n-channel
VCES = 600V
VCE(on) typ. = 1.65V
@VGE = 15V, IC = 27A
Benefits
• Generation 4 IGBT's offer highest efficiencies
available
• IGBT's optimized for specific application conditions
• HEXFRED diodes optimized for performance with
IGBT's . Minimized recovery characteristics require
less/no snubbing
• Designed to be a "drop-in" replacement for
equivalent industry-standard Generation 3 IR IGBT's
TO-247AC
Absolute Maximum Ratings
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
IF @ TC = 100°C
IFM
VGE
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current Q
Clamped Inductive Load Current R
Diode Continuous Forward Current
Diode Maximum Forward Current
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw.
Max.
600
55
27
220
220
25
220
± 20
200
78
-55 to +150
300 (0.063 in. (1.6mm) from case)
10 lbf•in (1.1 N•m)
Units
V
A
V
W
°C
Thermal Resistance
RθJC
RθJC
RθCS
RθJA
Wt
www.irf.com
Parameter
Junction-to-Case - IGBT
Junction-to-Case - Diode
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight
Min.
------
------
------
-----
------
Typ.
------
------
0.24
-----
6 (0.21)
Max.
0.64
0.83
------
40
------
Units
°C/W
g (oz)
1
04/23/04






IRG4PC50UDPBF Datasheet, Funktion
IRG4PC50UDPbF
8.0
R G = 5.0
T J = 150°C
V CC = 480V
V GE = 15V
6.0
4.0
2.0
1000 VGGE E= 2 0V
TJ = 125°C
100 SAFE OPERATING AREA
10
0.0 A
0 10 20 30 40 50 60
IC , Collector-to-Em itter Current (A)
Fig. 11 - Typical Switching Losses vs.
Collector-to-Emitter Current
100
1
1 10 100 1000
VC E , Collector-to-Em itter Voltage (V)
Fig. 12 - Turn-Off SOA
TJ = 1 50 °C
TJ = 1 25 °C
10 TJ = 25 °C
1
0.6 1.0 1.4 1.8 2.2 2.6
Forward Voltage Drop - V FM (V)
Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current
6 www.irf.com

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