PDF SPM6M080-010D Data sheet ( Hoja de datos )

Número de pieza	SPM6M080-010D
Descripción	Three-Phase MOSFET BRIDGE
Fabricantes	Sensitron
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No Preview Available ! SENSITRON SEMICONDUCTOR SPM6M080-010D TECHNICAL DATA Datasheet 4118, Rev. C Three-Phase MOSFET BRIDGE, With Gate Driver and Optical Isolation DESCRIPTION: A 100 VOLT, 80 AMP, THREE PHASE MOSFET BRIDGE ELECTRICAL CHARACTERISTICS PER MOSFET DEVICE PARAMETER SYMBOL (Tj=250C UNLESS OTHERWISE SPECIFIED) MIN TYP MAX UNIT MOSFET SPECIFICATIONS Drain-to-Source Breakdown Voltage ID = 500 µA, VGS = 0V Continuous Drain Current TC = 25 OC TC = 90 OC Pulsed Drain Current, Pulse Width limited to 1 msec Gate to Source Voltage Gate- Source Leakage Current , VGE = +/-20V www.DataSheet4U.com Zero Gate Voltage Drain Current VDS = 100 V, VGS=0V Ti=25oC VDS= 80 V, VGS=0V Ti=125oC Static Drain-to-Source On Resistance, ID= 60A, VGS = 15V, Maximum Thermal Resistance Tj = 25 OC Tj = 150 OC Maximum operating Junction Temperature Maximum Storage Junction Temperature BVDSS ID IDM VGS IGSS ICSS RDSon RθJC Tjmax Tjmax 100 - - V - - 80 70 - - 200 - - +/-20 - - +/- 200 -- 1 3 - 0.009 0.012 0.018 - A A V nA mA mA V - - 0.65 oC/W -40 - 150 oC -55 - 150 oC • 221 West Industry Court Deer Park, NY 11729 (631) 586 7600 FAX (631) 242 9798 • • World Wide Web Site - http://www.sensitron.com • E-mail Address - [email protected] • Page 1 of 7 1 page SENSITRON TECHNICAL DATA Datasheet 4118, Rev. C SPM6M080-010D Package Pin Locations (All dimensions are in inches; tolerance is +/- 0.005” except otherwise specified) • 221 West Industry Court Deer Park, NY 11729 (631) 586 7600 FAX (631) 242 9798 • • World Wide Web Site - http://www.sensitron.com • E-mail Address - [email protected] • Page 5 of 7 5 Page

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