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PDF NJ42 Data sheet ( Hoja de datos )
| Número de pieza | NJ42 | |
| Descripción | Silicon Junction Field-Effect Transistor | |
| Fabricantes | INTERFET | |
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F-24
NJ42 Process
Silicon Junction Field-Effect Transistor
¥ General Purpose Amplifier
¥ High Breakdown Voltage
Absolute maximum ratings at TA = 25¡C
Gate Current, Ig
10 mA
Operating Junction Temperature, Tj
+150°C
Storage Temperature, Ts
– 65°C to +175°C
Devices in this Databook based on the NJ42 Process.
Datasheet
2N6449, 2N6450
IFN6449, IFN6450
www.DataSheet4U.com
01/99
S
D
S
Die Size = 0.032" X 0.032"
All Bond Pads = 0.004", Dia.
Substrate is also Gate.
At 25°C free air temperature:
Static Electrical Characteristics
Gate Source Breakdown Voltage
Reverse Gate Leakage Current
Drain Saturation Current (Pulsed)
Gate Source Cutoff Voltage
Dynamic Electrical Characteristics
Forward Transconductance
Input Capacitance
Feedback Capacitance
Equivalent Noise Voltage
V(BR)GSS
IGSS
IDSS
VGS(OFF)
Min
– 300
2
–2
Typ
– 400
–1
Max
– 10
10
– 12
NJ42 Process
Unit Test Conditions
V IG = 1 µA, VDS = ØV
nA VGS = – 150V, VDS = ØV
mA VDS = 30V, VGS = ØV
V VDS = 30V, ID = 1 nA
gfs
800
µS VDS = 30V, VGS = ØV
f = 1 kHz
Ciss
6 10 pF VDS = 30V, VGS = ØV
f = 1 MHz
Crss
2 5 pF VDS = 30V, VGS = ØV
f = 1 MHz
e¯N 10 nV/√HZ VDS = 15V, VGS = ØV f = 1 kHz
1000 N. Shiloh Road, Garland, TX 75042
(972) 487-1287 FAX (972) 276-3375
www.interfet.com
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet NJ42.PDF ] | |
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