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PDF NJ14AL Data sheet ( Hoja de datos )
| Número de pieza | NJ14AL | |
| Descripción | Silicon Junction Field-Effect Transistor | |
| Fabricantes | InterFET | |
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F-4
NJ14AL Process
Silicon Junction Field-Effect Transistor
¥ Low-Noise, High Gain Amplifier
¥ Rf AMP to 1.0 Ghz
Absolute maximum ratings at TA = 25¡C
Gate Current, Ig
10 mA
Operating Junction Temperature, Tj
+150°C
Storage Temperature, Ts
– 65°C to +175°C
Devices in this Databook based on the NJ14AL Process.
Datasheet
IF140, IF140A
IF142
www.DataSheet4U.com
01/99
G
S-D
S-D
G
Die Size = 0.016" X 0.016"
All Round Bond Pads = 0.0028"
All Square Bond Pads = 0.004"
Substrate is also Gate.
At 25°C free air temperature:
Static Electrical Characteristics
Gate Source Breakdown Voltage
Gate Reverse Current
Gate Source Cutoff Voltage
Drain Saturation Current (Pulsed)
V(BR)GSS
IGSS
VGS(OFF)
IDSS
Dynamic Electrical Characteristics
Common Source Forward Transconductance gfs
Common Source Input Capacitance
Ciss
Common Source Reverse Transfer Capacitance Crss
Equivalent Noise Voltage
e¯N
Min
– 15
– 0.5
0.5
Typ
– 22
– 2.0
10
Max
– 100
–7
20
NJ14AL Process
Unit Test Conditions
V IG = – 1 µA, VDS = ØV
pA VGS = – 10V, VDS = ØV
V VGS = 10V, ID = 1 nA
mA VDS = 10V, VGS = ØV
5.5
mS VDS = 10V, VGS = ØV
f = 1 kHz
2.3
pF VDS = 15V, VGS = ØV
f = 1 MHz
0.5
pF VDS = 15V, VGS = ØV
f = 1 MHz
4
nV/√HZ VDS = 10V, ID = 5 mA
f = 1 kHz
1000 N. Shiloh Road, Garland, TX 75042
(972) 487-1287 FAX (972) 276-3375
www.interfet.com
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet NJ14AL.PDF ] | |
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