PDF SLD-1083CZ Data sheet ( Hoja de datos )

Número de pieza	SLD-1083CZ
Descripción	4 Watt Discrete LDMOS FET
Fabricantes	Sirenza Microdevices
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No Preview Available ! Product Description Sirenza Microdevices’ SLD-1083CZ is a robust 4 Watt high perfor- mance LDMOS transistor designed for operation from to 2700MHz. It is an excellent solution for applications requiring high linearity and effi- ciency at a low cost. The SLD-1083CZ is typically used in the design of driver stages for power amplifiers, repeaters, and RFID applica- tions.The power transistor is fabricated using Sirenza’s latest, high per- formance LDMOS II process. Functional Schematic Diagram ESD Protection SLD-1083CZ 4 Watt Discrete LDMOS FET in Ceramic Package Pb RoHS Compliant & Green Package Product Features • 4 Watt Output P1dB • Single Polarity Supply Voltage • High Gain: 18 dB at 915 MHz • High Efficiency: 43% at 3W CW • XeMOS II LDMOS • Integrated ESD Protection, Class 1B Case Flange = Ground RF Specifications Applications • Base Station PA driver • Repeaters • RFID • Military Communication • GSM/CDMA Symbol Parameter Unit Frequency Frequency of Operation MHz Gain 3 Watt CW, 902-928MHz dB Efficiency Drain Efficiency at 3 Watt CW, 915MHz % IRL Input Return Loss, 3 Watt Output Power, 915MHz 3rd Order IMD at 3 Watt PEP (Two Tone), 915MHz dB dBc Linearity 1dB Compression (P1dB), 915MHz IS-95, 9 Ch Fwd, Offset=750KHz, ACPR Integrated Bandwidth, ACPR=-55dB Watt dBm IS-95, 9 Ch Fwd, Offset=750KHz, ACPR Integrated Bandwidth, ACPR=-45dB dBm RTH Thermal Resistance (Junction-to-Case) ºC/W Test Conditions VDS = 28.0V, IDQ = 50mA, TFlange = 25ºC Min - 18 40 -9.5 - - - - Typ Max - 2700 19 - 43 - -12 - -30 -26 4- 21 - 29 - 11 DC Specifications Symbol gm VGS Threshold VGS Quiescent VDS Breakdown Ciss Crss Coss RDSon Parameter Forward Transconductance @ 30mA IDS IDS=3mA, VDS=28V IDS=50mA, VDS=28V 1mA VDS current Input Capacitance (Gate to Source) VGS=0V VDS=28V Reverse Capacitance (Gate to Drain) VGS=0V VDS=28V Output Capacitance (Drain to Source) VGS=0V VDS=28V Drain to Source Resistance, VGS=10V VDS=250mV Unit Min Typical Max mA / V 150 Volts 4.2 Volts 3 4 5 Volts 65 pF 5.2 pF 0.2 pF 3.2 Ω 3.0 The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or ommisions. Sirenza Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2005 Sirenza Microdevices, Inc. All worldwide rights reserved. 303 S. Technology Court, Phone: (800) SMI-MMIC http://www.sirenza.com Broomfield, CO 80021 1 EDS-104013 Rev F 1 page Package Outline Drawing 0.290 0.160 SLD-1083CZ 2700MHz 4 Watt LDMOS FET Chamferred Lead is FET Drain Lead Coplanarity Lead foot to backside 0.000 ± 0.002 0.000±0.002 TOP VIEW R0.015 DETAIL A 0.200 0.100 0.050 SIDE VIEW 0.090 DETAIL A 0.160 0.140 0.160 END VIEW 0.008 Recommended Landing Pads for the RF083 Package Part Number Ordering Information Part Number Devices Per Reel Reel Size SLD-1083CZ 500 7’’ 303 S. Technology Court Broomfield, CO 80021 All Dimensions are in inches Phone: (800) SMI-MMIC 5 http://www.sirenza.com EDS-104013 Rev F 5 Page

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