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PDF SLD-2083CZ Data sheet ( Hoja de datos )
| Número de pieza | SLD-2083CZ | |
| Descripción | 12 Watt Discrete LDMOS FET | |
| Fabricantes | Sirenza Microdevices | |
| Logotipo |  |
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Product Description
Sirenza Microdevices’ SLD-2083CZ is a robust 12 Watt high perfor-
mance LDMOS transistor designed for operation to 2700MHz. It is an
excellent solution for applications requiring high linearity and efficiency at
a low cost. The SLD-2083CZ is typically used in the design of driver
stages for power amplifiers, repeaters, and RFID applications. The power
transistor is fabricated using Sirenza’s high performance XeMOS IITM
process.
Functional Schematic Diagram
ESD
Protection
SLD-2083CZ
Pb RoHS Compliant
& Green Package
12 Watt Discrete LDMOS FET in
Ceramic Package
Product Features
• 12 Watt Output P1dB
• Single Polarity Supply Voltage
• High Gain: 18 dB at 915 MHz
• High Efficiency: 47% at 10W CW
• XeMOS II LDMOS
• Integrated ESD Protection, Class 1B
Case Flange = Ground
RF Specifications
Applications
• Base Station PA driver
• Repeaters
• RFID
• Military Communication
• GSM/CDMA
Symbol
Parameter
Unit
Frequency
Frequency of Operation
MHz
Gain
10 Watt CW, 902 - 928MHz
dB
Efficiency
Drain Efficiency at 10 Watt CW, 915MHz
%
IRL Input Return Loss, 10 Watt Output Power, 915MHz
3rd Order IMD at 10 Watt PEP (Two Tone), 915MHz
dB
dBc
Linearity
1dB Compression (P1dB), 915MHz
IS-95, 9 Ch Fwd, Offset=750KHz, ACPR Integrated Bandwidth,
ACPR=-55dB
Watt
Watt
IS-95, 9 Ch Fwd, Offset=750KHz, ACPR Integrated Bandwidth,
ACPR=-45dB
Watt
RTH Thermal Resistance (Junction-to-Case)
Test Conditions VDS = 28.0V, IDQ = 125mA, TFlange = 25ºC
T
ºC/W
Min
10
17
40
-
-
Typ Max
- 2700
18 -
47 -
-15 -10
-28 -26
12 -
1.6 -
3.6 -
4
DC Specifications
Symbol
gm
VGSThreshold
VDS Breakdown
Ciss
Crss
Coss
RDSon
Parameter
Forward Transconductance @ 125mA IDS
IDS=3mA
1mA IDS current
Input Capacitance (Gate to Source) VGS=0V, VDS=28V
Reverse Capacitance (Gate to Drain) VGS=0V, VDS=28V
Output Capacitance (Drain to Source) VGS=0V, VDS=28V
Drain to Source Resistance, VGS=10V, VDS=250mV
Unit Min Typical Max
mA / V
590
Volt 3.8
Volt 65
pF 27.5
pF 0.81
pF 14.65
Ω 0.6
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or ommisions. Sirenza Microdevices assumes no responsibility for the use of this information, and all such
information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Sirenza Microdevices
does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2005 Sirenza Microdevices, Inc. All worldwide rights reserved.
303 S. Technology Court,
Phone: (800) SMI-MMIC
http://www.sirenza.com
Broomfield, CO 80021
1 EDS-103754 Rev E
1 page  
Impedance data
SLD-2083CZ 12 Watt LDMOS FET
Input
Matching
Network
Device
under test
Zsource
Z load
Output
Matching
Network
Zsource and Zload are the optimal impedances presented to the SLD-2083CZ when operating at 28V, Idq=125mA, Pout=10 W PEP
Impedance Data
Frequency (MHz)
870
880
900
930
960
Zsource
0.50 + j 2.0
0.55 + j 1.9
0.60 + j 1.8
0.65 + j 1.7
0.80 + j 1.4
Zload
4.3+ j 1.9
4.3 + j 2.0
4.4+ j 2.0
4.5 + j 2.0
4.7 + j 2.0
303 S. Technology Court
Broomfield, CO 80021
Phone: (800) SMI-MMIC
5
http://www.sirenza.com
EDS-103754 Rev E
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet SLD-2083CZ.PDF ] | |
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