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PDF SGA-5589Z Data sheet ( Hoja de datos )
| Número de pieza | SGA-5589Z | |
| Descripción | Cascadable SiGe HBT MMIC Amplifier | |
| Fabricantes | Sirenza Microdevices | |
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Product Description
The SGA-5589 is a high performance SiGe HBT MMIC Ampli-
fier. A Darlington configuration featuring 1 micron emitters pro-
vides high FT and excellent thermal perfomance. The
heterojunction increases breakdown voltage and minimizes
leakage current between junctions. Cancellation of emitter
junction non-linearities results in higher suppression of
intermodulation products. Only 2 DC-blocking capacitors, a
bias resistor and an optional RF choke are required for opera-
tion.
The matte tin finish on Sirenza’s lead-free package utilizes a
post annealing process to mitigate tin whisker formation and
is RoHS compliant per EU Directive 2002/95. This package is
also manufactured with green molding compounds that con-
tain no antimony trioxide nor halogenated fire retardants.
Gain & Return Loss vs. Frequency
VD= 3.9 V, ID= 60 mA (Typ.)
32
0
GAIN
24
ORL
16 IRL
-10
-20
8 -30
0 -40
0123456
Frequency (GHz)
SGA-5589
SGA-5589Z Pb RoHS Compliant
& Green Package
DC-4000 MHz, Cascadable
SiGe HBT MMIC Amplifier
Product Features
• Now available in Lead Free, RoHS
Compliant, & Green Packaging
• High Gain : 20.8 dB at 1950 MHz
• Cascadable 50 Ohm
• Operates From Single Supply
• Low Thermal Resistance Package
Applications
• PA Driver Amplifier
• Cellular, PCS, GSM, UMTS
• IF Amplifier
• Wireless Data, Satellite
Symbol
Parameter
Units
Frequency
Min. Typ. Max.
G Small Signal Gain
dB
850 MHz
21.5 24.0 26.5
dB 1950 MHz
20.8
dB 2400 MHz
18.9
P1dB
Output Power at 1dB Compression
dBm
dBm
850 MHz
1950 MHz
18.2
16.2
OIP3 Output Third Order Intercept Point
dBm
dBm
850 MHz
1950 MHz
32.9
29.2
Bandwidth Determined by Return Loss (>10dB)
MHz
4000
IRL Input Return Loss
dB 1950 MHz
13.7
ORL Output Return Loss
dB 1950 MHz
25.2
NF Noise Figure
dB 1950 MHz
3.4
VD Device Operating Voltage
V
3.5 3.9 4.3
ID Device Operating Current
mA
54 60 66
RTH, j-l Thermal Resistance (junction to lead)
°C/W
97
Test Conditions:
VS = 8 V
RBIAS = 68 Ohms
ID = 60 mA Typ.
TL = 25ºC
OIP3 Tone Spacing = 1 MHz, Pout per tone = 0 dBm
ZS = ZL = 50 Ohms
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this
information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or
granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2001 Sirenza Microdevices, Inc.. All worldwide rights
reserved.
303 Technology Court, Broomfield, CO 80021
Phone: (800) SMI-MMIC
1
http://www.sirenza.com
EDS-101443 Rev D
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet SGA-5589Z.PDF ] | |
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