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NGA-586 Schematic ( PDF Datasheet ) - Sirenza Microdevices

Teilenummer NGA-586
Beschreibung DC-5.5 GHZ CASCADABLE IN GAP /GAAS MMIC AMPLIFIER
Hersteller Sirenza Microdevices
Logo Sirenza Microdevices Logo 




Gesamt 5 Seiten
NGA-586 Datasheet, Funktion
Product Description
Sirenza Microdevices’ NGA-586 is a high performance InGaP/
GaAs Heterojunction Bipolar Transistor MMIC Amplifier. A
Darlington configuration designed with InGaP process
technology provides broadband performance up to 5.5 GHz with
excellent thermal perfomance. The heterojunction increases
breakdown voltage and minimizes leakage current between
junctions. Cancellation of emitter junction non-linearities results
in higher suppression of intermodulation products. At 850 Mhz
and 80mA , the NGA-586 typically provides +39.6 dBm output
IP3, 19.8 dB of gain, and +18.9 dBm of 1dB compressed power
using a single positive voltage supply. Only 2 DC-blocking
capacitors, a bias resistor and an optional RF choke are required
for operation.
Gain & Return Loss vs. Freq. @TL=+25°C
24
GAIN
20
IRL
16
12
ORL
0
-10
-20
-30
8 -40
0123456
Frequency (GHz)
NGA-586
DC-5.5 GHz, Cascadable
InGaP/GaAs HBT MMIC Amplifier
OBSOLETE
See Application Note AN-059 for Alternates
Product Features
• High Gain : 18.6 dB at 1950 MHz
• Cascadable 50 Ohm
• Patented InGaP Technology
• Operates From Single Supply
• Low Thermal Resistance Package
Applications
• PA Driver Amplifier
• Cellular, PCS, GSM, UMTS
• IF Amplifier
• Wireless Data, Satellite
Symbol
Parameter
Units Frequency Min. Typ. Max.
G Small Signal Gain
850 MHz
17.8 19.8 21.8
dB 1950 MHz
18.6
2400 MHz
17.9
P1dB
Output Power at 1dB Compression
dBm
850 MHz
1950 MHz
18.9
18.5
OIP3 Output Third Order Intercept Point
dBm
850 MHz
1950 MHz
39.6
34.0
Bandwidth Determined by Return Loss (>10dB)
MHz
5500
IRL Input Return Loss
dB 1950 MHz
14.9
ORL Output Return Loss
dB 1950 MHz
19.5
NF Noise Figure
dB 1950 MHz
3.5
VD Device Operating Voltage
V
4.5 4.9
5.4
ID Device Operating Current
mA
72 80 88
RTH, j-l Thermal Resistance (junction to lead)
Test Conditions:
VS = 8v
RBIAS = 39 Ohms
ID = 80mA Typ.
TL = 25ºC
°C/W
121
IP3 Tone Spacing = 1 MHz, Pout per tone = 0 dBm
ZS = ZL = 50 Ohms
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of
this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are
implied or granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2001 Sirenza Microdevices, Inc..
All worldwide rights reserved.
522 Almanor Ave., Sunnyvale, CA 94085
Phone: (800) SMI-MMIC
http://www.sirenza.com
1 EDS-101105 Rev. OBS





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