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PDF CEB21A3 Data sheet ( Hoja de datos )
| Número de pieza | CEB21A3 | |
| Descripción | N-Channel Logic Level Enhancement Mode Field Effect Transistor | |
| Fabricantes | CET | |
| Logotipo |  |
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CEP21A3/CEB21A3
Nov. 2002
4 N-Channel Logic Level Enhancement Mode Field Effect Transistor 4
FEATURES
30V , 20A , RDS(ON)=45mΩ @VGS=10V.
RDS(ON)=70mΩ @VGS=4.5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handling capability.
TO-220 & TO-263 package.
D
G
D
GS
CEB SERIES
TO-263(DD-PAK)
G
D
S
CEP SERIES
TO-220
S
ABSOLUTE MAXIMUM RATINGS (TC=25 C unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
-Pulsed
Drain-Source Diode Forward Current
Maximum Power Dissipation @Tc=25 C
Derate above 25 C
Operating and Storage Temperature Range
Symbol
VDS
VGS
ID
IDM
IS
PD
TJ, TSTG
Limit
30
Ć20
20
60
20
43
0.29
-65 to 175
Unit
V
V
A
A
A
W
W/ C
C
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
RįJC
RįJA
4-167
3.5
62.5
C/W
C/W
1 page  
CEP21A3/CEB21A3
4
VDD
4
RL
VIN
D VOUT
VGS
RGEN G
td(on)
VOUT
t on
tr
td(off)
90%
10% INVERTED
toff
tf
90%
10%
90%
S
VIN 50%
50%
10%
PULSE WIDTH
Figure 11. Switching Test Circuit
Figure 12. Switching Waveforms
2
1
D=0.5
0.2
0.1
0.1 0.05
0.02
0.01
Single Pulse
0.01
10-5
10-4
10-3
10-2
10-1
Square Wave Pulse Duration (sec)
PDM
t1
t2
1. RįJC (t)=r (t) * RįJC
2. RįJC=See Datasheet
3. TJM-TC = P* RįJC (t)
4. Duty Cycle, D=t1/t2
1
Figure 13. Normalized Thermal Transient Impedance Curve
10
4-171
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet CEB21A3.PDF ] | |
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