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Teilenummer | CEB1175 |
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Beschreibung | N-Channel Enhancement Mode Field Effect Transistor | |
Hersteller | CET | |
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Gesamt 4 Seiten CEP1175/CEB1175
CEF1175
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
Type
CEP1175
CEB1175
CEF1175
VDSS
650V
650V
650V
RDS(ON)
1Ω
1Ω
1Ω
ID
10A
10A
10A e
@VGS
10V
10V
10V
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
D
G
D
G
S
CEB SERIES
TO-263(DD-PAK)
G
D
S
CEP SERIES
TO-220
G
D
S
CEF SERIES
TO-220F
S
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit
TO-220/263
TO-220F
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed a
Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
VDS 650
VGS ±30
ID 10 10 e
IDM f
40 40 e
167 50
PD 1.33 0.4
Operating and Store Temperature Range
TJ,Tstg
-55 to 150
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Symbol
RθJC
RθJA
Limit
0.75
62.5
2.5
65
Units
V
V
A
A
W
W/ C
C
Units
C/W
C/W
Details are subject to change without notice .
1
Rev 1. 2006.Oct
http://www.cetsemi.com
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Seiten | Gesamt 4 Seiten | |
PDF Download | [ CEB1175 Schematic.PDF ] |
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