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FVP12030IM3LEG1 Schematic ( PDF Datasheet ) - Fairchild Semiconductor

Teilenummer FVP12030IM3LEG1
Beschreibung Energy Recovery
Hersteller Fairchild Semiconductor
Logo Fairchild Semiconductor Logo 




Gesamt 10 Seiten
FVP12030IM3LEG1 Datasheet, Funktion
FVP12030IM3LEG1
Energy Recovery
March 2007
PDP SPMTM
Feature
• Use of high speed 300V IGBTs with parallel FRDs
• Single-grounded power supply by means of built-in HVIC
• Sufficient current driving capability for IGBTs due to adding a
buffer
• Isolation rating of 1500Vrms/min.
• Low leakge current due to using an insulated metal sub-
strates
Applications
• Energy Recovery Part of a PDP (Plasma Display Panel)
General Description
It is an advanced smart power module(SPMTM) that Fairchild
has newly developed and designed to provide very compact
and optimized performance for the energy recovery circuit of
PDP driving system. It combines optimized circuit protection
and drive matched to low-loss and high speed IGBTs. Under
voltage lock-out protection function enhances the system reli-
ability . The high speed built-in HVIC provides opto-couplerless
single power supply IGBT gate driving capability that futher
reduce the overall system size of PDP sustaining boards.
Package Outlines
Figure 1.
©2006 Fairchild Semiconductor Corporation
FVP12030IM3LEG1 Rev. A
1
www.fairchildsemi.com






FVP12030IM3LEG1 Datasheet, Funktion
Electrical Characteristics (TC = 25°C, Unless Otherwise Specified)
Symbol
Parameter
Conditions
IQCC
IQBS
Quiescent VCC Supply
Current
Quiescent VBS Supply
Current
VCC = 15V
VINL, VINH = 0V
VBS = 15V
VINL, VINH= 0V
VCCL-COML,
VCCH-COMH
VBL- VSL, VBH- VSH
UVBSD
Supply Circuit Under Volt-
age Protection
Detection Level
UVBSR
VIN(ON)
VIN(OFF)
ON Threshold Voltage
OFF Threshold Voltage
Reset Level
Applied between VINL-COML, ,VINH - COMH
Min.
-
-
10.1
10.5
3.0
-
Typ. Max. Units
- 100 µA
- 500 µA
11.3 12.5
11.7 12.9
--
- 0.8
V
V
V
V
Symbol
Parameter
Condition
Min.
VCE(SAT)
IGBT Collector-Emitter
Saturation Voltage
VF
tdON
tr
tdOFF
tF
ICES
IR
Diode Forward Voltage
Switching Times
IGBT Collector-Emitter
Leakage Current
Diode Anode-Cathode
Leakage Current
VCC = VBS = 15V
VIN = 5V
Between CL to AL
Between KH to EH
Between EH to CH
Between EL to CL
IC = 25A, TJ = 25°C
IC = 120A, TJ = 25°C
IF =30A, TJ = 25°C
IF =10A, TJ = 25°C
VCE=200V, VCC= VBS=15V
Ic = 20A
VIN = 0V V , Inductive Load
Tc = 25°C
(Note2)
VCE = 300V
Between CL to AL
Between KH to EH
Between EH to CH
Between EL to CL
VAnode-Cathode=300V
VAnode-Cathode=300V
-
-
-
-
-
-
Notes :
2 tON and tOFF include the propagation delay time of internal drive IC. For the detailed information, please see Figure 4.
Typ.
-
1.9
-
-
230
55
270
48
-
-
Max.
1.4
-
Units
V
V
1.4 V
1.7 V
ns
ns
ns
ns
250 µA
250 µA
250 µA
VIN
VCE
IC
90% of IC
td(on)
10% of IC
tr
VIN
IC
VCE
td(off)
90% of IC
tf
10% of Ic
Figure 4. Switching Time Definition
FVP12030IM3LEG1 Rev. A
6
www.fairchildsemi.com

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