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PDF FSB50550T Data sheet ( Hoja de datos )
| Número de pieza | FSB50550T | |
| Descripción | Smart Power Module | |
| Fabricantes | Fairchild Semiconductor | |
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FSB50550T
Smart Power Module (SPM)
September 2006
Features
• 500V 3.5A 3-phase FRFET inverter including high voltage
integrated circuit (HVIC)
• 3 divided negative dc-link terminals for inverter current sens-
ing applications
• HVIC for gate driving and undervoltage protection
• 3/5V CMOS/TTL compatible, active-high interface
• Optimized for low electromagnetic interference
• Isolation voltage rating of 1500Vrms for 1min.
• Extended VB pin for PCB isolation
General Description
FSB50550T is a tiny smart power module (SPM) based on
FRFET technology as a compact inverter solution for small
power motor drive applications such as fan motors and water
suppliers. It is composed of 6 fast-recovery MOSFET (FRFET),
and 3 half-bridge HVICs for FRFET gate driving. FSB50550T
provides low electromagnetic interference (EMI) characteristics
with optimized switching speed. Moreover, since it employs
FRFET as a power switch, it has much better ruggedness and
larger safe operation area (SOA) than that of an IGBT-based
power module or one-chip solution. The package is optimized
for the thermal performance and compactness for the use in the
built-in motor application and any other application where the
assembly space is concerned. FSB50550T is the most solution
for the compact inverter providing the energy efficiency,
compactness, and low electromagnetic interference.
Absolute Maximum Ratings
Symbol
Parameter
VPN
DC Link Input Voltage,
Drain-source Voltage of each FRFET
ID25 Each FRFET Drain Current, Continuous
ID80 Each FRFET Drain Current, Continuous
IDP Each FRFET Drain Current, Peak
PD Maximum Power Dissipation
VCC Control Supply Voltage
VBS High-side Bias Voltage
VIN Input Signal Voltage
TJ Operating Junction Temperature
TSTG Storage Temperature
RθJC Junction to Case Thermal Resistance
VISO Isolation Voltage
Conditions
Rating
500
TC = 25°C
TC = 80°C
TC = 25°C, PW < 100µs
TC = 80°C, Each FRFET
Applied between VCC and COM
Applied between VB(U)-U, VB(V)-V, VB(W)-W
Applied between IN and COM
1.8
1.2
3.5
4.5
20
20
-0.3 ~ VCC+0.3
-20 ~ 150
Each FRFET under inverter operating con-
dition (Note 1)
-50 ~ 150
8.6
60Hz, Sinusoidal, 1 minute, Connection
pins to heatsink
1500
Units
V
A
A
A
W
V
V
V
°C
°C
°C/W
Vrms
©2006 Fairchild Semiconductor Corporation
FSB50550T Rev. A
1
www.fairchildsemi.com
1 page  
VIN VIN
Irr
100% of ID
VDS
120% of ID
ID
10% of ID
ID VDS
tON trr
tOFF
(a) Turn-on
(b) Turn-off
Figure 4. Switching Time Definition
VCC
RBS
CBS
VCC
HIN
LIN
COM
VB
HO
VS
LO
L
+
VDS
-
ID
VDC
One-leg Diagram of SPM
Figure 5. Switching and RBSOA(Single-pulse) Test Circuit (Low-side)
Input Signal
UV Protection
Status
Low-side Supply, VCC
RESET
UVCCD
DETECTION
UVCCR
RESET
MOSFET Current
Figure 6. Undervoltage Protection (Low-side)
Input Signal
UV Protection
Status
High-side Supply, VBS
RESET
UVBSD
DETECTION
UVBSR
RESET
MOSFET Current
Figure 7. Undervoltage Protection (High-side)
FSB50550T Rev. A
5 www.fairchildsemi.com
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet FSB50550T.PDF ] | |
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