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Teilenummer | CEA6861 |
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Beschreibung | P-Channel Enhancement Mode Field Effect Transistor | |
Hersteller | CET | |
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Gesamt 4 Seiten CEA6861
P-Channel Enhancement Mode Field Effect Transistor
FEATURES
-60V, -2.4A, RDS(ON) = 135mΩ @VGS = -10V.
RDS(ON) = 180mΩ @VGS = -4.5V.
High dense cell design for extremely low RDS(ON).
Rugged and reliable.
Lead free product is acquired.
SOT-89 package.
D
D
SOT-89
S
D
G
G
S
ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed a
VDS -60
VGS ±20
ID -2.4
IDM -10
Maximum Power Dissipation
PD 1.25
Operating and Store Temperature Range
TJ,Tstg
-55 to 150
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Ambient b
Symbol
RθJA
Limit
100
Units
V
V
A
A
W
C
Units
C/W
Details are subject to change without notice .
1
Rev 1. 2006.Sep
http://www.cetsemi.com
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Seiten | Gesamt 4 Seiten | |
PDF Download | [ CEA6861 Schematic.PDF ] |
Teilenummer | Beschreibung | Hersteller |
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