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Número de pieza | FDZ193P | |
Descripción | P-Channel 1.7V PowerTrench WL-CSP MOSFET | |
Fabricantes | Fairchild Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de FDZ193P (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
No Preview Available ! December 2006
FDZ193P
P-Channel 1.7V PowerTrench® WL-CSP MOSFET
-20V, -1A, 90mΩ
Features
General Description
tm
Max rDS(on) = 90mΩ at VGS = -4.5V, ID = -1A
Max rDS(on) = 130mΩ at VGS = -2.5V, ID = -1A
Max rDS(on) = 300mΩ at VGS = -1.7V, ID = -1A
Occupies only 1.5 mm2 of PCB area Less than 50% of the
area of 2 x 2 BGA
Ultra-thin package: less than 0.65 mm height when mounted
to PCB
RoHS Compliant
Designed on Fairchild's advanced 1.7V PowerTrench® process
with state of the art "low pitch" WLCSP packaging process, the
FDZ193P minimizes both PCB space and rDS(on). This advanced
WLCSP MOSFET embodies a breakthrough in packaging
technology which enables the device to combine excellent
thermal transfer characteristics, ultra-low profile packaging, low
gate charge, and low rDS(on).
Application
Battery management
Load switch
Battery protection
S
S
D
S
D
PIN 1
PIN 1
G
www.DataSheet4U.com
S
G
BOTTOM
TOP
D
MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Symbol
VDS
VGS
ID
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Pulsed
Power Dissipation
Power Dissipation
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 1a)
(Note 1b)
Ratings
-20
±12
-3
-15
1.5
0.9
-55 to +150
Units
V
V
A
W
°C
RθJA
RθJA
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
(Note 1b)
83
140
°C/W
Device Marking
2
Device
FDZ193P
Package
WL-CSP
Reel Size
7’’
Tape Width
8mm
Quantity
5000 units
©2006 Fairchild Semiconductor Corporation
FDZ193P Rev.C1 (W)
1
www.fairchildsemi.com
1 page Typical Characteristics TJ = 25°C unless otherwise noted
2
1
0.1
0.01
10-3
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
PDM
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TA
10-2
10-1
100
101
t, RECTANGULAR PULSE DURATION (s)
Figure 12. Transient Thermal Response Curve
102
103
FDZ193P Rev.C1 (W)
5 www.fairchildsemi.com
5 Page |
Páginas | Total 7 Páginas | |
PDF Descargar | [ Datasheet FDZ193P.PDF ] |
Número de pieza | Descripción | Fabricantes |
FDZ193P | P-Channel 1.7V PowerTrench WL-CSP MOSFET | Fairchild Semiconductor |
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