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PDF FCB20N60 Data sheet ( Hoja de datos )
| Número de pieza | FCB20N60 | |
| Descripción | N-Channel MOSFET | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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FCB20N60
N-Channel SuperFET® MOSFET
600 V, 20 A, 190 mΩ
Features
• 650 V @TJ = 150 °C
• Typ. RDS(on) = 150 m
• Ultra Low Gate Charge (Typ. Qg = 75 nC)
• Low Effective Output Capacitance (Typ. Coss.eff = 165 pF)
• 100% Avalanche Tested
• RoHS Compliant
Application
• Lighting
• Solar Inverter
• AC-DC Power Supply
October 2013
Description
SuperFET® MOSFET is Fairchild Semiconductor’s first genera-
tion of high voltage super-junction (SJ) MOSFET family that is
utilizing charge balance technology for outstanding low on-
resistance and lower gate charge performance. This technology
is tailored to minimize conduction loss, provide superior switch-
ing performance, dv/dt rate and higher avalanche energy. Con-
sequently, SuperFET MOSFET is very suitable for the switching
power applications such as PFC, server/telecom power, FPD
TV power, ATX power and industrial power applications.
D
D
G
S
D2-PAK
G
MOSFET Maximum Ratings TC = 25oC unless otherwise noted
Symbol
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
Parameter
Drain to Source Voltage
Drain Current
Drain Current
- Continuous (TC = 25oC)
- Continuous (TC = 100oC)
- Pulsed
Gate to Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(TC = 25oC)
- Derate above 25oC
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
S
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
FCB20N60TM
600
20
12.5
60.0
±30
690
20
20.8
4.5
208
1.67
-55 to +150
300
Thermal Characteristics
Symbol
RJC
RJA
Parameter
Thermal Resistance, Junction to Case, Max
Thermal Resistance, Junction to Ambient (minimum pad of 2 oz copper), Max.
Thermal Resistance, Junction to Ambient (1 in2 pad of 2 oz copper), Max.
FCB20N60TM
0.6
62.5
40
Unit
V
A
A
V
mJ
A
mJ
V/ns
W
W/oC
oC
oC
Unit
oC/W
©2005 Fairchild Semiconductor Corporation
FCB20N60 Rev. C1
1
www.fairchildsemi.com
1 page  
Figure 12. Gate Charge Test Circuit & Waveform
Same Type
50KΩ as DUT
12V 200nF
300nF
VGS
10V
VGS
VDS
Qgs
IG = co3nmsAt.
DUT
Qg
Qgd
Charge
V10GVS
Figure 13. Resistive Switching Test Circuit & Waveforms
VDS
VGS
RG
RL
VDD
DUT
VDS
90%
VGS 10%
td(on)
tr
t on
td(off)
tf
t off
V1G0GVSS
tp
Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms
VDS
ID
RG
L
EAS = --21-- L IAS2
------B--V--D--S-S-------
BVDSS - VDD
BVDSS
IAS
VDD ID (t)
DUT
VDD
VDS (t)
t p Time
©2005 Fairchild Semiconductor Corporation
FCB20N60 Rev. C1
5
www.fairchildsemi.com
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet FCB20N60.PDF ] | |
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