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NIF9N05CL Schematic ( PDF Datasheet ) - ON Semiconductor

Teilenummer NIF9N05CL
Beschreibung Protected Power MOSFET
Hersteller ON Semiconductor
Logo ON Semiconductor Logo 




Gesamt 6 Seiten
NIF9N05CL Datasheet, Funktion
NIF9N05CL
Protected Power MOSFET
2.6 A, 52 V, N−Channel, Logic Level,
Clamped MOSFET w/ ESD Protection
in a SOT−223 Package
Benefits
High Energy Capability for Inductive Loads
Low Switching Noise Generation
Features
Diode Clamp Between Gate and Source
ESD Protection − HBM 5000 V
Active Over−Voltage Gate to Drain Clamp
Scalable to Lower or Higher RDS(on)
Internal Series Gate Resistance
Pb−Free Packages are Available
Applications
Automotive and Industrial Markets:
Solenoid Drivers, Lamp Drivers, Small Motor Drivers
www.DataSheet4U.com
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol Value Unit
Drain−to−Source Voltage Internally Clamped VDSS
52−59
V
Gate−to−Source Voltage − Continuous
VGS ±15 V
Drain Current
− Continuous @ TA = 25°C
− Single Pulse (tp = 10 ms) (Note 1)
ID
2.6 A
IDM 10
Total Power Dissipation @ TA = 25°C (Note 1) PD
1.69 W
Operating and Storage Temperature Range TJ, Tstg −55 to 150 °C
Single Pulse Drain−to−Source
Avalanche Energy (VDD = 50 V, ID(pk) = 1.17
A, VGS = 10 V, L = 160 mH, RG = 25 W)
EAS
110 mJ
Thermal Resistance,
Junction−to−Ambient (Note 1)
Junction−to−Ambient (Note 2)
RqJA
RqJA
°C/W
74
169
Maximum Lead Temperature for Soldering TL 260 °C
Purposes, 1/8from Case for 10 Seconds
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. When surface mounted to a FR4 board using 1pad size, (Cu area 1.127 in2).
2. When surface mounted to a FR4 board using minimum recommended pad
size, (Cu area 0.412 in2).
© Semiconductor Components Industries, LLC, 2006
May, 2006 − Rev. 5
1
http://onsemi.com
VDSS
(Clamped)
52 V
RDS(ON) TYP
107 mW
ID MAX
2.6 A
Gate
(Pin 1)
Overvoltage
Protection
RG
ESD Protection
Drain
(Pins 2, 4)
MPWR
Source
(Pin 3)
SOT−223
CASE 318E
STYLE 3
MARKING DIAGRAM
GATE
DRAIN
SOURCE
1
2
3
4
DRAIN
(Top View)
A = Assembly Location
Y = Year
W = Work Week
F9N05 = Specific Device Code
G = Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
Publication Order Number:
NIF9N05CL/D






NIF9N05CL Datasheet, Funktion
NIF9N05CL
PACKAGE DIMENSIONS
SOT−223 (TO−261)
CASE 318E−04
ISSUE L
D
b1
4
HE
1 23
E
e1
e
0.08 (0003)
A1
b
Aq
C
L1
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
MILLIMETERS
DIM MIN NOM MAX
A 1.50
1.63
1.75
A1 0.02
0.06
0.10
b 0.60 0.75 0.89
b1 2.90
3.06
3.20
c 0.24 0.29 0.35
D 6.30
6.50
6.70
E 3.30 3.50 3.70
e 2.20 2.30 2.40
e1 0.85
0.94
1.05
L1 1.50
1.75
2.00
H E 6.70 7.00 7.30
q 0°
− 10°
STYLE 3:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
MIN
0.060
0.001
0.024
0.115
0.009
0.249
0.130
0.087
0.033
0.060
0.264
0°
INCHES
NOM
0.064
0.002
0.030
0.121
0.012
0.256
0.138
0.091
0.037
0.069
0.276
MAX
0.068
0.004
0.035
0.126
0.014
0.263
0.145
0.094
0.041
0.078
0.287
10°
SOLDERING FOOTPRINT*
3.8
0.15
2.0
0.079
2.3
0.091
2.3
0.091
6.3
0.248
2.0
0.079
1.5
0.059
ǒ ǓSCALE 6:1
mm
inches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
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Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
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Europe, Middle East and Africa Technical Support:
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Phone: 81−3−5773−3850
ON Semiconductor Website: www.onsemi.com
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For additional information, please contact your local
Sales Representative
http://onsemi.com
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NIF9N05CL/D

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