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PDF CS101 Data sheet ( Hoja de datos )
| Número de pieza | CS101 | |
| Descripción | Standard Cell | |
| Fabricantes | Fujitsu Media Devices | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de CS101 (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
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FUJITSU SEMICONDUCTOR
DATA SHEET
DS06-20210-2E
Semicustom
CMOS
Standard Cell
CS101 Series
■ DESCRIPTION
CS101 series, a 90 nm standard cell product, is a CMOS ASIC that satisfies user’s demands for lower power
consumption and higher speed. The leakage current of the transistors is the minimum level in the industry. Three
types of core transistors with a different threshold voltage can be mixed according to user application.
The design rules match industry standards, and a wide range of IP macros are available for use.
As well as providing a maximum of 100 million gates, approximately twice the level of integration achieved in
previous products, the power consumption per gate is also reduced by about half to 2.7 nW. Also, using the high-
speed library increases the speed by a factor of approximately 1.3, with a gate delay time of 12 ps.
■ FEATURES
www.DataSheet4U.com
• Technology
: 90 nm Si gate CMOS
7- to 10-metal layers.
Low-K (low permittivity) material is used for all dielectric inter-layers.
Three different types of core transistors (low leak, standard, and high speed)
can be used on the same chip.
The design rules comply with industry standard processes.
• Power supply voltage
: +1.2 V ± 0.1 V (standard)
• Operation junction temperature : − 40 °C to + 125 °C (standard)
• Gate delay time
: tpd = 12 ps (1.2 V, Inverter, F/O = 1)
• Gate power consumption
: Pd = 2.7 nW/MHz/BC (1.2 V, 2 NAND, F/O = 1)
• High level of integration
: Up to 91 million gates
• Reduced chip sized realized by I/O with pad.
• Support for a wide range of cell sets (from low power versions to ultra high speed versions).
• Compliance with industry standard design rules enables non-Fujitsu commercial macros to be easily incorpo-
rated.
• Compiled cell (RAM, ROM, others)
• Support for ultra high speed (up to 10 Gbps) interface macros.
• Special interfaces (LVDS, SSTL2, etc.)
• Supports use of industry standard libraries (.LIB).
• Uses industry standard tools and supports the optimum tools for the application.
(Continued)
1 page  
CS101 Series
■ RECOMMENDED OPERATING CONDITIONS
• Single power supply (VDD = 1.2 V ± 0.1 V)
Parameter
Power supply voltage
H level input voltage
L level input voltage
Operation junction
temperature
Symbol
VDD
VIH
VIL
Tj
Min
1.1
VDD × 0.7
− 0.3
− 40
Value
Typ
1.2
⎯
⎯
⎯
Max
1.3
VDD + 0.3
VDD × 0.3
+ 125
(VSS = 0 V)
Unit
V
V
V
°C
• Dual power supply (VDDE = 2.5 V ± 0.2 V, VDDI = 1.2 V ± 0.1 V)
Parameter
2.5 V
Power supply voltage
1.2 V
2.5 V CMOS level
H level input voltage
1.2 V CMOS level
L level input voltage
2.5 V CMOS level
1.2 V CMOS level
Operation junction temperature
Symbol
VDDE
VDDI
VIH
VIL
Tj
Min
2.3
1.1
1.7
VDDI × 0.7
− 0.3
− 0.3
− 40
Value
Typ
2.5
1.2
⎯
⎯
⎯
⎯
⎯
(VSS = 0 V)
Max
2.7
1.3
VDDE + 0.3
VDDI + 0.3
+ 0.7
VDDI × 0.3
+ 125
Unit
V
V
V
V
V
V
°C
• Dual power supply (VDDE = 3.3 V ± 0.3 V, VDDI = 1.2 V ± 0.1 V)
Parameter
3.3 V
Power supply voltage
1.2 V
3.3 V CMOS level
H level input voltage
1.2 V CMOS level
L level input voltage
3.3 V CMOS level
1.2 V CMOS level
Operation junction temperature
Symbol
VDDE
VDDI
VIH
VIL
Tj
Min
3.0
1.1
2.0
VDDI × 0.7
− 0.3
− 0.3
− 40
Value
Typ
3.3
1.2
⎯
⎯
⎯
⎯
⎯
(VSS = 0 V)
Max
3.6
1.3
VDDE + 0.3
VDDI + 0.3
+ 0.8
VDDI × 0.3
+ 125
Unit
V
V
V
V
V
V
°C
WARNING: The recommended operating conditions are required in order to ensure the normal operation of the
semiconductor device. All of the device’s electrical characteristics are warranted when the device is
operated within these ranges.
Always use semiconductor devices within their recommended operating condition ranges. Operation
outside these ranges may adversely affect reliability and could result in device failure.
No warranty is made with respect to uses, operating conditions, or combinations not represented on
the data sheet. Users considering application outside the listed conditions are advised to contact their
FUJITSU representatives beforehand.
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet CS101.PDF ] | |
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