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PDF MUR1100E Data sheet ( Hoja de datos )
| Número de pieza | MUR1100E | |
| Descripción | (MUR180E / MUR1100E) Power Rectifiers | |
| Fabricantes | ON Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de MUR1100E (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
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MUR180E, MUR1100E
MUR1100E is a Preferred Device
SWITCHMODEt
Power Rectifiers
Ultrafast “E” Series with High Reverse
Energy Capability
These state−of−the−art devices are designed for use in switching
power supplies, inverters and as free wheeling diodes.
Features
• 10 mjoules Avalanche Energy Guaranteed
• Excellent Protection Against Voltage Transients in Switching
Inductive Load Circuits
• Ultrafast 75 Nanosecond Recovery Time
• 175°C Operating Junction Temperature
• Low Forward Voltage
• Low Leakage Current
• High Temperature Glass Passivated Junction
• Reverse Voltage to 1000 V
• These are Pb−Free Devices*
Mechanical Characteristics:
• Case: Epoxy, Molded
• Weight: 0.4 Gram (Approximately)
www.DataSheet4U.com
• Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
• Lead Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
• Shipped in Plastic Bags; 1,000 per Bag
• Available Tape and Reel; 5,000 per Reel, by Adding a “RL’’ Suffix to
the Part Number
• Polarity: Cathode Indicated by Polarity Band
MAXIMUM RATINGS
Rating
Symbol
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
MUR180E
MUR1100E
VRRM
VRWM
VR
Value
800
1000
Unit
V
Average Rectified Forward Current (Note 1)
(Square Wave Mounting Method #3 Per Note 3)
Non-Repetitive Peak Surge Current
(Surge applied at rated load conditions,
halfwave, single phase, 60 Hz)
IF(AV)
IFSM
1.0 @
TA = 95°C
35
A
A
Operating Junction Temperature and Storage TJ, Tstg −65 to
Temperature Range
+175
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
http://onsemi.com
ULTRAFAST RECTIFIERS
1.0 AMPERES, 800−1000 VOLTS
PLASTIC
AXIAL LEAD
CASE 59
MARKING DIAGRAM
A
MUR1x0E
YYWW G
G
A = Assembly Location
MUR1x0E = Device Code
x 8 or 10
Y = Year
WW = Work Week
G = Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2006
July, 2006 − Rev. 3
1
Publication Order Number:
MUR180E/D
1 page  
MUR180E, MUR1100E
NOTE 3 — AMBIENT MOUNTING DATA
Data shown for thermal resistance, junction−to−ambient
(RqJA) for the mountings shown is to be used as typical
guideline values for preliminary engineering or in case the
tie point temperature cannot be measured.
TYPICAL VALUES FOR RqJA IN STILL AIR
Mounting
Method
1
2 RqJA
3
Lead Length, L
1/8 1/4 1/2
52 65 72
67 80 87
50
Units
°C/W
°C/W
°C/W
MOUNTING METHOD 1
LL
ÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉ
MOUNTING METHOD 2
ÉÉÉÉÉÉÉÉL ÉÉÉÉÉÉÉÉÉÉLÉÉÉÉÉÉ
Vector Pin Mounting
MOUNTING METHOD 3
ÉÉ L = 3/8″
ÉÉÉÉÉÉÉÉÉÉ Board Ground Plane
ÉÉÉÉ P.C. Board with
1−1/2″ X 1−1/2″ Copper Surface
http://onsemi.com
5
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet MUR1100E.PDF ] | |
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