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PDF MUN5137DW1T1 Data sheet ( Hoja de datos )
| Número de pieza | MUN5137DW1T1 | |
| Descripción | (MUN5111DW1T1 Series) Dual Bias Resistor Transistors | |
| Fabricantes | ON Semiconductor | |
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MUN5111DW1T1 Series
Preferred Devices
Dual Bias Resistor
Transistors
PNP Silicon Surface Mount Transistors
with Monolithic Bias Resistor Network
The BRT (Bias Resistor Transistor) contains a single transistor with a
monolithic bias network consisting of two resistors; a series base resistor
and a base−emitter resistor. These digital transistors are designed to
replace a single device and its external resistor bias network. The BRT
eliminates these individual components by integrating them into a single
device. In the MUN5111DW1T1 series, two BRT devices are housed in
the SOT−363 package which is ideal for low−power surface mount
applications where board space is at a premium.
Features
• Simplifies Circuit Design
• Reduces Board Space
• Reduces Component Count
• Pb−Free Packages are Available
MAXIMUM RATINGS
(TA = 25°C unless otherwise noted, common for Q1 and Q2)
Rating
Symbol
Value
Unit
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
THERMAL CHARACTERISTICS
VCBO
VCEO
IC
− 5w0ww.DataSheeVt4Ud.ccom
−50 Vdc
−100
mAdc
Characteristic
(One Junction Heated)
Symbol
Max
Unit
Total Device Dissipation
TA = 25°C
Derate above 25°C
PD 187 (Note 1) mW
256 (Note 2)
1.5 (Note 1) mW/°C
2.0 (Note 2)
Thermal Resistance,
Junction-to-Ambient
RqJA
670 (Note 1) °C/W
490 (Note 2)
Characteristic
(Both Junctions Heated)
Symbol
Max
Unit
Total Device Dissipation
TA = 25°C
Derate above 25°C
PD 250 (Note 1) mW
385 (Note 2)
2.0 (Note 1) mW/°C
3.0 (Note 2)
Thermal Resistance,
Junction-to-Ambient
RqJA
493 (Note 1) °C/W
325 (Note 2)
Thermal Resistance,
Junction-to-Lead
RqJL
188 (Note 1) °C/W
208 (Note 2)
Junction and Storage Temperature Range TJ, Tstg −55 to +150 °C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. FR−4 @ Minimum Pad
2. FR−4 @ 1.0 x 1.0 inch Pad
© Semiconductor Components Industries, LLC, 2005
September, 2005 − Rev. 6
1
http://onsemi.com
(3) (2) (1)
R1 R2
Q1
R2 R1
Q2
(4) (5)
(6)
1
SOT−363
CASE 419B
STYLE 1
MARKING DIAGRAM
6
xx M G
G
1
xx = Device Code (Refer to page 2)
M = Date Code
G = Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the table on
page 2 of this data sheet.
DEVICE MARKING INFORMATION
See specific marking information in the device marking table
on page 2 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
Publication Order Number:
MUN5111DW1T1/D
1 page  
1
IC/IB = 10
MUN5111DW1T1 Series
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5111DW1T1
1000
TA = −25°C
0.1 100
25°C
75°C
VCE = 10 V
TA = 75°C
25°C
−25°C
0.01
0
20 40
IC, COLLECTOR CURRENT (mA)
Figure 2. VCE(sat) versus IC
10
50 1
10
IC, COLLECTOR CURRENT (mA)
Figure 3. DC Current Gain
100
4 100 75°C 25°C
f = 1 MHz
3
lE = 0 V
TA = 25°C
10
TA = −25°C
1
2
0.1
1
0.01 VO = 5 V
0 0.001
0 10 20 30 40 50
0 1 2 3 4 5 6 7 8 9 10
VR, REVERSE BIAS VOLTAGE (VOLTS)
Vin, INPUT VOLTAGE (VOLTS)
Figure 4. Output Capacitance
Figure 5. Output Current versus Input Voltage
100
VO = 0.2 V
10
1
TA = −25°C
75°C
25°C
0.1
0 10 20 30 40 50
IC, COLLECTOR CURRENT (mA)
Figure 6. Input Voltage versus Output Current
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5
5 Page 
MUN5111DW1T1 Series
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5130DW1T1
1
IC/IB = 10
0.1
0.01
−25°C
25°C
75°C
1000
100
10
0.001
0
5 10 15 20 25
IC, COLLECTOR CURRENT (mA)
Figure 32. VCE(sat) versus IC
30
1
1
VCE = 10 V
75°C
TA = −25°C
25°C
10
IC, COLLECTOR CURRENT (mA)
Figure 33. DC Current Gain
100
TBD
VR, REVERSE BIAS VOLTAGE (VOLTS)
Figure 34. Output Capacitance
10
100
75°C
10
25°C
1
TA = −25°C
0.1
0.01
VO = 5 V
0.001
01
23 45 67 8
Vin, INPUT VOLTAGE (VOLTS)
9 10
Figure 35. Output Current versus Input Voltage
TA = −25°C
1 75°C
25°C
VO = 0.2 V
0.1
0
5 10 15 20
IC, COLLECTOR CURRENT (mA)
25
Figure 36. Input Voltage versus Output Current
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