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PDF MUN2113T1 Data sheet ( Hoja de datos )
| Número de pieza | MUN2113T1 | |
| Descripción | (MUN2111T1 Series) PNP SILICON BIAS RESISTOR TRANSISTOR | |
| Fabricantes | Motorola Semiconductors | |
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MUN2111T1/D
Bias Resistor Transistor
PNP Silicon Surface Mount Transistor with
Monolithic Bias Resistor Network
This new series of digital transistors is designed to replace a single device and its
external resistor bias network. The BRT (Bias Resistor Transistor) contains a single
transistor with a monolithic bias network consisting of two resistors; a series base
resistor and a base–emitter resistor. The BRT eliminates these individual components
by integrating them into a single device. The use of a BRT can reduce both system
cost and board space. The device is housed in the SC–59 package which is designed
for low power surface mount applications.
• Simplifies Circuit Design
• Reduces Board Space
• Reduces Component Count
• The SC–59 package can be soldered using wave or reflow.
The modified gull–winged leads absorb thermal stress during
R1
soldering eliminating the possibility of damage to the die.
• Available in 8 mm embossed tape and reel
PIN2 R2
BASE
Use the Device Number to order the 7 inch/3000 unit reel. (INPUT)
PIN3
COLLECTOR
(OUTPUT)
PIN1
EMITTER
(GROUND)
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Rating
Symbol
Collector–Base Voltage
Collector–Emitter Voltage
Collector Current
Total Power Dissipation @ TA = 25°C(1)
Derate above 25°C
www.DataSheet4U.com
VCBO
VCEO
IC
PD
MUN2111T1
SERIES
Motorola Preferred Devices
PNP SILICON
BIAS RESISTOR
TRANSISTOR
2
1
3
CASE 318D–03, STYLE 1
(SC–59)
Value
50
50
100
*200
1.6
Unit
Vdc
Vdc
mAdc
mW
mW/°C
THERMAL CHARACTERISTICS
Thermal Resistance — Junction–to–Ambient (surface mounted)
Operating and Storage Temperature Range
Maximum Temperature for Soldering Purposes,
Time in Solder Bath
RθJA
TJ, Tstg
TL
625
– 65 to +150
260
10
°C/W
°C
°C
Sec
DEVICE MARKING AND RESISTOR VALUES
Device
Marking
R1 (K)
MUN2111T1
MUN2112T1
MUN2113T1
MUN2114T1
MUN2115T1(2)
MUN2116T1(2)
MUN2130T1(2)
MUN2131T1(2)
MUN2132T1(2)
MUN2133T1(2)
MUN2134T1(2)
6A
6B
6C
6D
6E
6F
6G
6H
6J
6K
6L
10
22
47
10
10
4.7
1.0
2.2
4.7
4.7
22
1. Device mounted on a FR–4 glass epoxy printed circuit board using the minimum recommended footprint.
2. New devices. Updated curves to follow in subsequent data sheets.
Thermal Clad is a trademark of the Bergquist Company
Preferred devices are Motorola recommended choices for future use and best overall value.
R2 (K)
10
22
47
47
∞
∞
1.0
2.2
4.7
47
47
REV 5
©MMoototorroollaa, ISncm. 1a9l9l–6Signal Transistors, FETs and Diodes Device Data
1
1 page  
10
IC/IB = 10
1
MUN2111T1 SERIES
TYPICAL ELECTRICAL CHARACTERISTICS — MUN2112T1
TA = –25°C
25°C
75°C
1000
100
VCE = 10 V
TA = 75°C
25°C
–25°C
0.1
0.01
0
20 40 60
IC, COLLECTOR CURRENT (mA)
Figure 7. VCE(sat) versus IC
80
10
1
10
IC, COLLECTOR CURRENT (mA)
Figure 8. DC Current Gain
100
4 100
75°C 25°C
3
f = 1 MHz
lE = 0 V
TA = 25°C
10
TA = –25°C
1
2
0.1
1
0.01
VO = 5 V
0
0
10 20 30
40 50 0.001 0 1 2 3 4 5 6 7 8 9 10
VR, REVERSE BIAS VOLTAGE (VOLTS)
Vin, INPUT VOLTAGE (VOLTS)
Figure 9. Output Capacitance
Figure 10. Output Current versus Input Voltage
100
VO = 0.2 V
TA = –25°C
10 25°C
75°C
1
0.1
0 10
20 30 40 50
IC, COLLECTOR CURRENT (mA)
Figure 11. Input Voltage versus Output Current
Motorola Small–Signal Transistors, FETs and Diodes Device Data
5
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet MUN2113T1.PDF ] | |
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