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Número de pieza | MC33363 | |
Descripción | High Voltage Switching Regulator | |
Fabricantes | ON Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de MC33363 (archivo pdf) en la parte inferior de esta página. Total 14 Páginas | ||
No Preview Available ! MC33363
High Voltage Switching
Regulator
The MC33363 is a monolithic high voltage switching regulator that is
specifically designed to operate from a rectified 240 Vac line source.
This integrated circuit features an on−chip 700 V/1.0 A SENSEFETt
power switch, 450 V active off−line startup FET, duty cycle controlled
oscillator, current limiting comparator with a programmable threshold
and leading edge blanking, latching pulse width modulator for double
pulse suppression, high gain error amplifier, and a trimmed internal
bandgap reference. Protective features include cycle−by−cycle current
limiting, input undervoltage lockout with hysteresis, output overvoltage
protection, and thermal shutdown. This device is available in a 16−lead
dual−in−line and wide body surface mount packages.
Features
• On−Chip 700 V, 1.0 A SENSEFET Power Switch
• Rectified 240 Vac Line Source Operation
• On−Chip 450 V Active Off−Line Startup FET
• Latching PWM for Double Pulse Suppression
• Cycle−By−Cycle Current Limiting
• Input Undervoltage Lockout with Hysteresis
• Output Overvoltage Protection Comparator
• Trimmed Internal Bandgap Reference
• Internal Thermal Shutdown
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MARKING
DIAGRAMS
16
1
16
1
PDIP−16
P SUFFIX
CASE 648E
MC33363P
AWLYYWW
SO−16W
DW SUFFIX
CASE 751N
MC33363DW
AWLYYWW
A = Assembly Location
WL = Wafer Lot
YY = Year
WW = Work Week
PIN CONNECTIONS
AC Input
Startup Input 1
Regulator
Output
8
6
RT
CT 7
Mirror
Osc
PWM
Thermal
Startup
Reg
PWM Latch
S Driver
Q
R
VCC
UVLO
3
Overvoltage
Protection
Input
OVP 11
16
Power Switch
Drain
LEB
Ipk
Compensation
9
EA 10
GND 4, 5, 12, 13
Voltage
Feedback
Input
This device contains 221 active transistors.
Figure 1. Simplified Application
Startup Input 1
16
Power Switch
Drain
DC Output
VCC 3
4
GND
5
RT 6
CT 7
Regulator Output 8
13
GND
12
11
Overvoltage
Protection Input
10
Voltage Feedback
Input
9 Compensation
(Top View)
ORDERING INFORMATION
Device
Package
Shipping†
MC33363DW
SO−16W 47 Units/Rail
MC33363DWR2 SO−16W 1000 Tape & Reel
MC33363P
PDIP−16 25 Units/Rail
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2006
July, 2006 − Rev. 7
1
Publication Order Number:
MC33363/D
1 page 1.80 V
1.75 V
MC33363
VCC = 20 V
AV = −1.0
CL = 10 pF
TA = 25°C
3.00 V
1.75 V
VCC = 20 V
AV = −1.0
CL = 10 pF
TA = 25°C
1.70 V
1.0 ms/DIV
Figure 7. Error Amplifier Small Signal
Transient Response
0.50 V
1.0 ms/DIV
Figure 8. Error Amplifier Large Signal
Transient Response
0
VCC = 20 V
RT = 10 k
− 20 CPIN 8 = 1.0 mF
TA = 25°C
− 40
− 60
− 80
0
4.0 8.0 12
16
Ireg, REGULATOR SOURCE CURRENT (mA)
Figure 9. Regulator Output Voltage
Change versus Source Current
20
20
VPin 1 = 400 V
TA = 25°C
10
Pulse tested with an on−time of 20 ms to 300 ms
at < 1.0% duty cycle. The on−time is adjusted at
Pin 1 for a maximum peak current out of Pin 3.
0
0 2.0 4.0 6.0 8.0 10
12
VCC, POWER SUPPLY VOLTAGE (V)
Figure 10. Peak Startup Current
versus Power Supply Voltage
14
32
ID = 200 mA
24
16
8.0
0
−50 −25
Pulse tested at 5.0 ms with < 1.0% duty cycle
so that TJ is as close to TA as possible.
0 25 50 75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
Figure 11. Power Switch Drain−Source
On−Resistance versus Temperature
160
VCC = 20 V
TA = 25°C
120
80
40
COSS measured at 1.0 MHz with 50 mVpp.
0
1.0 10 100
1000
VDS, DRAIN−SOURCE VOLTAGE (V)
Figure 12. Power Switch
Drain−Source Capacitance versus Voltage
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5
5 Page MC33363
F1
1.0 A
D4
92 to 276
Vac Input
D2
D3
1N4006
D1
C1
33
C4 8
1.0
6
R1
15 k
C3 7
820 pF
Mirror
Osc
PWM
Thermal
Startup
Reg
PWM Latch
S Driver
Q
R
LEB
ILimit
270 μA
4, 5, 12, 13
EA
C5
4.0 nF
1
3
UVLO
14.5 V/
9.5 V
11
OVP
2.6 V
16
R6
180 k
1.0 W
D5
MUR
1100E
C6
47 pF
R7
2.2 k
1.0 W
D6 D7
R5 MUR T1 MBR
39 120
1635
L1
C9 C10 5.0 μH
330 330
C2 R8
10 220
R4
5.1 k
C8
330
R9
1 2.80 k
R3
1.0 k
2
C7
100 nF
IC2
MOC
3
8103 IC3
TL431B 2
1
5.05 V/1.6 A
DC Output
C11
220
C12
1.0
R10
2.74 k
5
4
9
R2
2.6 V 2.7 k
10
IC1 MC33363
Figure 20. 8.0 W Off−Line Converter
Test
Conditions
Results
Line Regulation Vin = 92 Vac to 276 Vac, IO 1.6 A
Load Regulation Vin = 115 Vac, IO = 0.4 A to 1.6 A
D = 1.0 mV
D = 4.0 mV
Output Ripple
Vin = 230 Vac, IO = 0.4 A to 1.6 A
Vin = 115 Vac, IO = 1.6 A
D = 4.0 mV
Triangular = 2.0 mVpp, Spike = 12 mVpp
Vin = 230 Vac, IO = 1.6 A
Triangular = 2.0 mVpp, Spike = 12 mVpp
Efficiency
Vin = 115 Vac, IO = 1.6 A
Vin = 230 Vac, IO = 1.6 A
78.6%*
75.6%
This data was taken with the components listed below mounted on the printed circuit board shown in Figure 22.
* With MBR2535CTL, 79.8% efficiency. PCB layout modification is required to use this rectifier.
For high efficiency and small circuit board size, the Sanyo Os−Con capacitors are recommended for C8, C9, C10 and C11.
C8, C9, C10 = Sanyo Os−Con #6SA330M, 330 mF 6.3 V.
C11 = Sanyo Os−Con #10SA220M, 220 mF 10 V.
L1 = Coilcraft S5088−A, 5.0 mH, 0.11 W.
T1 = Coilcraft S5502−A
Primary: 77 turns of # 28 AWG, Pin 1 = start, Pin 8 = finish.
Two layers 0.002″ Mylar tape.
Secondary: 5 turns of # 22 AWG, 2 strands bifiliar wound, Pin 5 = start, Pin 4 = finish.
Two layers 0.002″ Mylar tape.
Auxiliary: 13 turns of # 28 AWG wound in center of bobbin, Pin 2 = start, Pin 7 = finish.
Two layers 0.002″ Mylar tape.
Gap: 0.006″ total for a primary inductance (LP) of 1.0 mH.
Core and Bobbin: Coilcraft PT1950, E187, 3F3 material.
Figure 21. Converter Test Data
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11
11 Page |
Páginas | Total 14 Páginas | |
PDF Descargar | [ Datasheet MC33363.PDF ] |
Número de pieza | Descripción | Fabricantes |
MC33362 | HIGH VOLTAGE OFF-LINE SWITCHING REGULATOR | Motorola Semiconductors |
MC33362 | High Voltage Switching Regulator | ON Semiconductor |
MC33363 | HIGH VOLTAGE OFF-LINE SWITCHING REGULATOR | Motorola Semiconductors |
MC33363 | High Voltage Switching Regulator | ON Semiconductor |
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