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PDF MMBF5460LT1 Data sheet ( Hoja de datos )
| Número de pieza | MMBF5460LT1 | |
| Descripción | JFET General Purpose Transistor | |
| Fabricantes | Motorola Semiconductors | |
| Logotipo |  |
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MOTOROLA
www.DataSheet4U.com
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MMBF5460LT1/D
JFET General Purpose Transistor
P–Channel
3
GATE
2 SOURCE
MMBF5460LT1
MAXIMUM RATINGS
Rating
Drain–Gate Voltage
Reverse Gate–Source Voltage
Forward Gate Current
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board(1)
TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
DEVICE MARKING
MMBF5460LT1 = 6E
1 DRAIN
Symbol
VDG
VGSR
IGF
Value
40
40
10
Unit
Vdc
Vdc
mAdc
Symbol
PD
Rq JA
TJ, Tstg
Max
225
1.8
556
– 55 to +150
Unit
mW
mW/°C
°C/W
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Gate–Source Breakdown Voltage (IG = 10 µAdc, VDS = 0)
V(BR)GSS
Gate Reverse Current
(VGS = 20 Vdc, VDS = 0)
(VGS = 20 Vdc, VDS = 0, TA = 100°C)
IGSS
Gate Source Cutoff Voltage (VDS = 15 Vdc, ID = 1.0 µAdc)
Gate Source Voltage (VDS = 15 Vdc, ID = 0.1 mAdc)
ON CHARACTERISTICS
VGS(off)
VGS
Zero–Gate–Voltage Drain Current (VDS = 15 Vdc, VGS = 0)
IDSS
SMALL–SIGNAL CHARACTERISTICS
Forward Transfer Admittance (VDS = 15 Vdc, VGS = 0, f = 1.0 kHz)
|Yfs|
Output Admittance (VDS = 15 Vdc, VGS = 0, f = 1.0 kHz)
Input Capacitance (VDS = 15 Vdc, VGS = 0, f = 1.0 MHz)
Reverse Transfer Capacitance (VDS = 15 Vdc, VGS = 0, f = 1.0 MHz)
|yos|
Ciss
Crss
Equivalent Short–Circuit Input Noise Voltage
(VDS = 15 Vdc, VGS = 0, RG = 1.0 MΩ,
f = 100 Hz, BW = 1.0 Hz)
1. FR– 5 = 1.0 0.75 0.062 in.
en
Min
40
—
—
0.75
0.5
–1.0
1000
—
—
—
—
3
1
2
CASE 318 – 08, STYLE 10
SOT– 23 (TO – 236AB)
Typ Max Unit
— — Vdc
— 5.0 nAdc
— 1.0 µAdc
— 6.0 Vdc
— 4.0 Vdc
—
– 5.0
mAdc
—
4000
µmhos
— 75 µmhos
5.0 7.0 pF
1.0 2.0 pF
20 — nVń ǸHz
Thermal Clad is a trademark of the Bergquist Company
Motorola Small–Signal Transistors, FETs and Diodes Device Data
© Motorola, Inc. 1997
1
1 page  
PACKAGE DIMENSIONS
MMBF5460LT1
A
L
3
BS
12
VG
STYLE 10:
PIN 1. DRAIN
2. SOURCE
3. GATE
C
D H KJ
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD THICKNESS
IS THE MINIMUM THICKNESS OF BASE
MATERIAL.
INCHES
DIM MIN MAX
A 0.1102 0.1197
B 0.0472 0.0551
C 0.0350 0.0440
D 0.0150 0.0200
G 0.0701 0.0807
H 0.0005 0.0040
J 0.0034 0.0070
K 0.0180 0.0236
L 0.0350 0.0401
S 0.0830 0.0984
V 0.0177 0.0236
MILLIMETERS
MIN MAX
2.80 3.04
1.20 1.40
0.89 1.11
0.37 0.50
1.78 2.04
0.013 0.100
0.085 0.177
0.45 0.60
0.89 1.02
2.10 2.50
0.45 0.60
CASE 318–08
ISSUE AE
SOT–23 (TO–236AB)
Motorola Small–Signal Transistors, FETs and Diodes Device Data
5
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| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet MMBF5460LT1.PDF ] | |
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