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PDF MLD1N06CL Data sheet ( Hoja de datos )
| Número de pieza | MLD1N06CL | |
| Descripción | MOSFET ( Transistor ) | |
| Fabricantes | ON Semiconductor | |
| Logotipo |  |
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MLD1N06CL
Preferred Device
SMARTDISCRETESt MOSFET
1 Amp, 62 Volts, Logic Level
N−Channel DPAK
The MLD1N06CL is designed for applications that require a rugged
power switching device with short circuit protection that can be
directly interfaced to a microcontrol unit (MCU). Ideal applications
include automotive fuel injector driver, incandescent lamp driver or
other applications where a high in−rush current or a shorted load
condition could occur.
This Logic Level Power MOSFET features current limiting for
short circuit protection, integrated Gate−Source clamping for ESD
protection and integral Gate−Drain clamping for over−voltage
protection and Sensefet technology for low on−resistance. No
additional gate series resistance is required when interfacing to the
output of a MCU, but a 40 kW gate pulldown resistor is recommended
to avoid a floating gate condition.
The internal Gate−Source and Gate−Drain clamps allow the device
to be applied without use of external transient suppression
components. The Gate−Source clamp protects the MOSFET input
from electrostatic voltage stress up to 2.0 kV. The Gate−Drain clamp
protects the MOSFET drain from the avalanche stress that occurs with
inductive loads. Their unique design provides voltage clamping that is
essentially independent of operating temperature.
Features
• Pb−Free Package is Available
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol Value
Unit
Drain−to−Source Voltage
Drain−to−Gate Voltage (RGS = 1.0 MW)
Gate−to−Source Voltage
− Continuous
Drain Current − Continuous
− Single Pulse
Total Power Dissipation
Operating and Storage Temperature Range
Electrostatic Discharge Voltage
(Human Model)
VDSS
VDGR
VGS
ID
IDM
PD
TJ, Tstg
ESD
Clamped
Clamped
±10
Self−limited
1.8
40
−50 to 150
2.0
Vdc
Vdc
Vdc
Adc
Apk
W
°C
kV
THERMAL CHARACTERISTICS
Thermal Resistance
Junction−to−Case
Junction−to−Ambient (Note 1)
Junction−to−Ambient (Note 2)
RqJC
RqJA
RqJA
°C/W
3.12
100
71.4
Maximum Lead Temperature for Soldering
Purposes, 1/8″ from case for 5 seconds
TL
260 °C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. When surface mounted to an FR−4 board using the minimum recommended
pad size.
2. When surface mounted to an FR−4 board using the 0.5 sq.in. drain pad size.
http://onsemi.com
V(BR)DSS
62 V (Clamped)
RDS(on) TYP
750 mW
ID MAX
1.0 A
N−Channel D
R1
G
R2
12
3
4
CASE 369C
DPAK
STYLE 2
S
MARKING
DIAGRAM
YWW
L1N
06CG
Y
WW
L1N06C
G
= Year
= Work Week
= Device Code
= Pb−Free Package
ORDERING INFORMATION
Device
Package
Shipping†
MLD1N06CLT4
DPAK 2500 Tape & Reel
MLD1N06CLT4G DPAK 2500 Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2006
January, 2006 − Rev. 3
1
Publication Order Number:
MLD1N06CL/D
1 page  
MLD1N06CL
FORWARD BIASED SAFE OPERATING AREA
The FBSOA curves define the maximum drain−to−source
voltage and drain current that a device can safely handle
when it is forward biased, or when it is on, or being turned
on. Because these curves include the limitations of
simultaneous high voltage and high current, up to the rating
of the device, they are especially useful to designers of linear
systems. The curves are based on a case temperature of 25°C
and a maximum junction temperature of 150°C. Limitations
for repetitive pulses at various case temperatures can be
determined by using the thermal response curves.
ON Semiconductor Application Note, AN569, “Transient
Thermal Resistance − General Data and Its Use” provides
detailed instructions.
MAXIMUM DC VOLTAGE CONSIDERATIONS
The maximum drain−to−source voltage that can be
continuously applied across the MLD1N06CL when it is in
current limit is a function of the power that must be
dissipated. This power is determined by the maximum
current limit at maximum rated operating temperature
10
VGS = 10 V
SINGLE PULSE
TC = 25°C
(1.8 A at 150°C) and not the RDS(on). The maximum voltage
can be calculated by the following equation:
Vsupply =
(150 − TA)
ID(lim) (RqJC + RqCA)
where the value of RqCA is determined by the heatsink that
is being used in the application.
DUTY CYCLE OPERATION
When operating in the duty cycle mode, the maximum
drain voltage can be increased. The maximum operating
temperature is related to the duty cycle (DC) by the
following equation:
TC = (VDS x ID x DC x RqCA) + TA
The maximum value of VDS applied when operating in a
duty cycle mode can be approximated by:
VDS =
150 − TC
ID(lim) x DC x RqJC
10 ms
1.0 100 ms
1 ms
10 ms
0.1
0.1
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
dc
1.0 10
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
100
Figure 8. Maximum Rated Forward Bias
Safe Operating Area (MLD1N06CL)
1.0
D = 0.5
0.2
0.1
0.1 0.05
0.02
0.01
SINGLE PULSE
0.01
1.0E−05
1.0E−04
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
RqJC(t) = r(t) RqJC
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) − TC = P(pk) RqJC(t)
1.0E−03
1.0E−02
1.0E−01
t, TIME (s)
Figure 9. Thermal Response (MLD1N06CL)
1.0E+00
1.0E+01
http://onsemi.com
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| PDF Descargar | [ Datasheet MLD1N06CL.PDF ] | |
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