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PDF STSJ18NF3LL Data sheet ( Hoja de datos )
| Número de pieza | STSJ18NF3LL | |
| Descripción | LOW GATE CHARGE STripFET II POWER MOSFET | |
| Fabricantes | ST Microelectronics | |
| Logotipo |  |
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STSJ18NF3LL
N-CHANNEL 30V - 0.016 Ω - 18A PowerSO-8™
LOW GATE CHARGE STripFET™ II POWER MOSFET
Table 1: General Features
TYPE
VDSS
RDS(on)
ID
STSJ18NF3LL
30 V <0.019 Ω 18 A
■ TYPICAL RDS(on) = 0.016 Ω @ 10V
■ TYPICAL Qg = 12.5 nC @ 4.5 V
■ CONDUCTION LOSSES REDUCED
■ SWITCHING LOSSES REDUCED
■ IMPROVED JUNCTION-CASE THERMAL
RESISTANCE
Figure 1:Package
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronics unique “Single Feature
Size™” strip-based process. This silicon, housed
in thermally improved SO-8™ package, exhibits
optimal on-resistance versus gate charge trade-
off plus lower Rthj-c.
PowerSO-8™
Figure 2: Internal Schematic Diagram
APPLICATIONS
■ SPECIFICALLY DESIGNED AND OPTIMISED
FOR HIGH EFFICIENCY CPU CORE DC/DC
CONVERTERS FOR MOBILE PCS
DRAIN CONTACT ALSO ON THE BACKSIDE
Table 2: Order Codes
SALES TYPE
STSJ18NF3LL
MARKING
18F3LL)
PACKAGE
PowerSO-8
Table 3: ABSOLUTE MAXIMUM RATING
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 kΩ)
VGS Gate- source Voltage
ID Drain Current (continuous) at TC = 25°C (*)
ID Drain Current (continuous) at TC = 100°C(*)
IDM(•) Drain Current (pulsed)
Ptot Total Dissipation at TC = 25°C
Total Dissipation at TC = 25°C (#)
(•) Pulse width limited by safe operating area.
Value
30
30
± 16
18
18
72
70
3
(*) Value limited by wires bonding
PACKAGING
TAPE & REEL
Unit
V
V
V
A
A
A
W
W
March 2005
Rev. 1.0
1/9
1 page  
Figure 11: Normalized Gate Threshold Voltage vs
Temperature
STSJ18NF3LL
Figure 12: Normalized on Resistance vs Temperature
Figure 13: Source-drain Diode Forward
Characteristics
Figure 14: Normalized Breakdown Voltage vs
Temperature.
..
5/9
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| PDF Descargar | [ Datasheet STSJ18NF3LL.PDF ] | |
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| Número de pieza | Descripción | Fabricantes |
| STSJ18NF3LL | LOW GATE CHARGE STripFET II POWER MOSFET | ST Microelectronics |
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