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PDF STI50DE100 Data sheet ( Hoja de datos )
| Número de pieza | STI50DE100 | |
| Descripción | Hybrid Emitter Switched Bipolar Transistor ESBT | |
| Fabricantes | ST Microelectronics | |
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STI50DE100
Hybrid Emitter Switched Bipolar Transistor
ESBT® 1000 V - 50 A - 0.026 Ω
Preliminary Data
General features
VCS(ON)
1.3 V
IC
50 A
RCS(ON)
0.026 W
■ High voltage / high current Cascode
configuration
■ Ultra low equivalent on resistance
■ Very fast-switch up to 150 kHz
■ Ultra low Ciss
■ Low dynamic VCS(ON)
4
3
2
1
I4PAC-4L
Applications
■ Industrial converters
■ Welding
Description
The STI50DE100 is manufactured in a hybrid
structure, using dedicated high voltage Bipolar
and low voltage MOSFET technologies, aimed to
providing the best performance in ESBT topology.
The STI50DE100 is designed for use in industrial
converters and/or welding equipment.
Internal schematic diagrams
Order codes
Part Number
Marking
STI50DE100
STI50DE100
Package
I4PAC-4L
Packing
Tube
January 2007
Rev 1
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
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www.st.com
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1 page  
STI50DE100
Electrical characteristics
2.1 Electrical characteristics (curves)
Figure 1. Output characteristics
Figure 2. DC current gain
Figure 3. Collector-source On voltage Figure 4. Collector-source On voltage
Figure 5. Base-source On voltage
Figure 6. Base-source On voltage
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STI50DE100
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| PDF Descargar | [ Datasheet STI50DE100.PDF ] | |
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